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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPDD60R105CFD7XTMA1MOSFET N-CH 600V 31A HDSOP-10 Infineon Technologies |
2,053 |
|
Tabla de datos |
CoolMOS™ CFD7 | 10-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | - | 105mOhm @ 7.8A, 10V | 4.5V @ 390µA | 36 nC @ 10 V | ±20V | 1504 pF @ 400 V | - | 198W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-10-1 |
|
IPP65R115CFD7AAKSA1MOSFET N-CH 650V 21A TO220-3 Infineon Technologies |
3 |
|
Tabla de datos |
CoolMOS™ CFD7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 21A (Tc) | 10V | 115mOhm @ 9.7A, 10V | 4.5V @ 490µA | 41 nC @ 10 V | ±20V | 1950 pF @ 400 V | - | 114W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3 |
|
IPP65R090CFD7XKSA1HIGH POWER_NEW Infineon Technologies |
2,220 |
|
Tabla de datos |
CoolMOS™ CFD7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 25A (Tc) | 10V | 90mOhm @ 12.5A, 10V | 4.5V @ 630µA | 53 nC @ 10 V | ±20V | 2513 pF @ 400 V | - | 127W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IPW60R105CFD7XKSA1MOSFET N-CH 600V 21A TO247-3 Infineon Technologies |
4 |
|
Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 105mOhm @ 9.3A, 10V | 4.5V @ 470µA | 42 nC @ 10 V | ±20V | 1752 pF @ 400 V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-41 |
|
IPT60R065S7XTMA1MOSFET N-CH 600V 8A 8HSOF Infineon Technologies |
3,364 |
|
Tabla de datos |
CoolMOS™S7 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 8A (Tc) | 12V | 65mOhm @ 8A, 12V | 4.5V @ 490µA | 51 nC @ 12 V | ±20V | 1932 pF @ 300 V | - | 167W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
|
IPWS65R035CFD7AXKSA1MOSFET N-CH 650V 63A TO247-3-41 Infineon Technologies |
3,883 |
|
Tabla de datos |
CoolMOS™ CFD7A | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 63A (Tc) | 10V | 35mOhm @ 35.8A, 10V | 4.5V @ 1.79mA | 145 nC @ 10 V | ±20V | 7149 pF @ 400 V | - | 305W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3-41 |
|
IPB60R045P7ATMA1MOSFET N-CH 600V 61A TO263-3-2 Infineon Technologies |
5,000 |
|
Tabla de datos |
CoolMOS™ P7 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 61A (Tc) | 10V | 45mOhm @ 22.5A, 10V | 4V @ 1.08mA | 90 nC @ 10 V | ±20V | 3891 pF @ 400 V | - | 201W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
IPBE65R075CFD7AATMA1MOSFET N-CH 650V 32A TO263-7 Infineon Technologies |
2,505 |
|
Tabla de datos |
CoolMOS™ CFD7A | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 32A (Tc) | 10V | 75mOhm @ 16.4A, 10V | 4.5V @ 820µA | 68 nC @ 10 V | ±20V | 3288 pF @ 400 V | - | 171W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-3-10 |
|
|
IMBG65R083M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies |
4,911 |
|
Tabla de datos |
CoolSIC™ M1 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 28A (Tc) | 18V | 111mOhm @ 11.2A, 18V | 5.7V @ 3.3mA | 19 nC @ 18 V | +23V, -5V | 624 pF @ 400 V | - | 126W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
|
|
IRFP4568PBFXKMA1TRENCH >=100V PG-TO247-3 Infineon Technologies |
2,725 |
|
Tabla de datos |
HEXFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 171A (Tc) | 10V | 5.9mOhm @ 103A, 10V | 5V @ 250µA | 227 nC @ 10 V | ±30V | 10470 pF @ 50 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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