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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPW65R099C6FKSA1MOSFET N-CH 650V 38A TO247-3 Infineon Technologies |
2,509 |
|
Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 38A (Tc) | 10V | 99mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127 nC @ 10 V | ±20V | 2780 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
|
IRF6716MTRPBFMOSFET N-CH 25V 39A DIRECTFET Infineon Technologies |
2,210 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 25 V | 39A (Ta), 180A (Tc) | 4.5V, 10V | 1.6mOhm @ 40A, 10V | 2.4V @ 100µA | 59 nC @ 4.5 V | ±20V | 5150 pF @ 13 V | - | 3.6W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
|
IPB65R155CFD7ATMA1HIGH POWER_NEW Infineon Technologies |
3,182 |
|
Tabla de datos |
CoolMOS™ CFD7 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 155mOhm @ 6.4A, 10V | 4.5V @ 320µA | 28 nC @ 10 V | ±20V | 1283 pF @ 400 V | - | 77W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IPWS65R075CFD7AXKSA1MOSFET N-CH 650V 32A TO247-3-41 Infineon Technologies |
2,477 |
|
Tabla de datos |
CoolMOS™ CFD7A | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 32A (Tc) | 10V | 75mOhm @ 16.4A, 10V | 4.5V @ 820µA | 68 nC @ 10 V | ±20V | 3288 pF @ 400 V | - | 171W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3-41 |
|
|
IPW65R230CFD7AXKSA1650V COOLMOS CFD7A SJ POWER DEVI Infineon Technologies |
3 |
|
Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 230mOhm @ 5.2A, 10V | 4.5V @ 260µA | 23 nC @ 10 V | ±20V | 1044 pF @ 400 V | - | 63W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3 |
|
|
IPW65R070C6FKSA1MOSFET N-CH 650V 53.5A TO247-3 Infineon Technologies |
4,019 |
|
Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 53.5A (Tc) | 10V | 70mOhm @ 17.6A, 10V | 3.5V @ 1.76mA | 170 nC @ 10 V | ±20V | 3900 pF @ 100 V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
|
IPT60R125G7XTMA1MOSFET N-CH 600V 20A 8HSOF Infineon Technologies |
4,555 |
|
Tabla de datos |
CoolMOS™ G7 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 125mOhm @ 6.4A, 10V | 4V @ 320µA | 27 nC @ 10 V | ±20V | 1080 pF @ 400 V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
|
|
IPB65R125CFD7ATMA1HIGH POWER_NEW Infineon Technologies |
3,565 |
|
Tabla de datos |
CoolMOS™ CFD7 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 19A (Tc) | 10V | 125mOhm @ 8.5A, 10V | 4.5V @ 420µA | 36 nC @ 10 V | ±20V | 1694 pF @ 400 V | - | 98W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
|
IPL65R130CFD7AUMA1COOLMOS CFD7 SUPERJUNCTION MOSFE Infineon Technologies |
2,743 |
|
Tabla de datos |
CoolMOS™ | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 21A (Tc) | 10V | 130mOhm @ 8.5A, 10V | 4.5V @ 420µA | 36 nC @ 10 V | ±20V | 1694 pF @ 400 V | - | 127W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
|
IPT029N08N5ATMA1MOSFET N-CH 80V 52A/169A HSOF-8 Infineon Technologies |
2,043 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 52A (Ta), 169A (Tc) | 6V, 10V | 2.9mOhm @ 150A, 10V | 3.8V @ 108µA | 87 nC @ 10 V | ±20V | 6500 pF @ 40 V | - | 168W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-1 |
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