制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPB50N10S3L16ATMA1MOSFET N-CH 100V 50A TO263-3 Infineon Technologies |
2,691 | - |
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 4.5V, 10V | 15.4mOhm @ 50A, 10V | 2.4V @ 60µA | 64 nC @ 10 V | ±20V | 4180 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IRFSL3207ZPBFMOSFET N-CH 75V 120A TO262 Infineon Technologies |
2,173 | - |
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HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 4.1mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6920 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IPD80R360P7ATMA1MOSFET N-CH 800V 13A TO252-3 Infineon Technologies |
2,658 | - |
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CoolMOS™ P7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | 10V | 360mOhm @ 5.6A, 10V | 3.5V @ 280µA | 30 nC @ 10 V | ±20V | 930 pF @ 500 V | - | 84W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPB60R180C7ATMA1MOSFET N-CH 600V 13A TO263-3 Infineon Technologies |
2,294 | - |
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CoolMOS™ C7 | TO-263-4, D2PAK (3 Leads + Tab), TO-263AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 130mOhm @ 5.3A, 10V | 4V @ 260µA | 24 nC @ 10 V | ±20V | 1080 pF @ 400 V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPZA60R060P7XKSA1MOSFET N-CH 600V 48A TO247-4 Infineon Technologies |
3,654 | - |
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CoolMOS™ P7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 48A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 67 nC @ 10 V | ±20V | 2895 pF @ 400 V | - | 164W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
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IPB120N06S403ATMA2MOSFET N-CH 60V 120A TO263-3 Infineon Technologies |
4,235 | - |
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 120µA | 160 nC @ 10 V | ±20V | 13150 pF @ 25 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3-2 |
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IPB80N06S2L07ATMA3MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
2,559 | - |
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 6.7mOhm @ 60A, 10V | 2V @ 150µA | 130 nC @ 10 V | ±20V | 3160 pF @ 25 V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IQE065N10NM5CGSCATMA1OPTIMOS LOWVOLTAGE POWER MOSFET Infineon Technologies |
4,450 | - |
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OptiMOS™ 5 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 13A (Ta), 85A (Tc) | 6V, 10V | 6.5mOhm @ 20A, 10V | 3.8V @ 48µA | 43 nC @ 10 V | ±20V | 3000 pF @ 50 V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHTFN-9-1 |
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IRF60DM206MOSFET N-CH 60V 130A DIRECTFET Infineon Technologies |
3,386 | - |
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StrongIRFET™ | DirectFET™ Isometric ME | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 130A (Tc) | 6V, 10V | 2.9mOhm @ 80A, 10V | 3.7V @ 150µA | 200 nC @ 10 V | ±20V | 6530 pF @ 25 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric ME |
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IPW65R060CFD7XKSA1650V FET COOLMOS TO247 Infineon Technologies |
2,933 | - |
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CoolMOS™ CFD7 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 36A (Tc) | 10V | 60mOhm @ 16.4A, 10V | 4.5V @ 860µA | 68 nC @ 10 V | ±20V | 3288 pF @ 400 V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |