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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AUIRL1404ZSTRLMOSFET N-CH 40V 160A D2PAK Infineon Technologies |
800 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | 110 nC @ 5 V | ±16V | 5080 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IPP120P04P4L03AKSA2MOSFET P-CH 40V 120A TO220-3 Infineon Technologies |
208 |
|
Tabla de datos |
OptiMOS™ P2 | TO-220-3 | Tube | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 3.4mOhm @ 100A, 10V | 2.2V @ 340µA | 234 nC @ 10 V | +5V, -16V | 15000 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
|
IRFS3004TRLPBFMOSFET N-CH 40V 195A D2PAK Infineon Technologies |
201 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Ta) | 10V | 1.75mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9200 pF @ 25 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
BTS132E3129NKSA1BTS132 - N-CHANNEL TEMPFET Infineon Technologies |
14,500 |
|
Tabla de datos |
TEMPFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 24A (Tc) | 4.5V | 65mOhm @ 12A, 4.5V | 2.5V @ 1mA | - | ±20V | 1400 pF @ 25 V | - | 75W | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IRFI4110GPBFMOSFET N-CH 100V 72A TO220AB FP Infineon Technologies |
4,774 |
|
Tabla de datos |
HEXFET® | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 72A (Tc) | 10V | 4.5mOhm @ 43A, 10V | 4V @ 250µA | 290 nC @ 10 V | ±20V | 9540 pF @ 50 V | - | 61W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB Full-Pak |
|
IRLS4030TRL7PPMOSFET N-CH 100V 190A D2PAK Infineon Technologies |
796 |
|
Tabla de datos |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 190A (Tc) | 4.5V, 10V | 3.9mOhm @ 110A, 10V | 2.5V @ 250µA | 140 nC @ 4.5 V | ±16V | 11490 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
|
IRFS4115TRL7PPMOSFET N-CH 150V 105A D2PAK Infineon Technologies |
511 |
|
Tabla de datos |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 150 V | 105A (Tc) | 10V | 11.8mOhm @ 63A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 5320 pF @ 50 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
|
IPI200N25N3GAKSA1MOSFET N-CH 250V 64A TO262-3 Infineon Technologies |
3,072 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 64A (Tc) | 10V | 20mOhm @ 64A, 10V | 4V @ 270µA | 86 nC @ 10 V | ±20V | 7100 pF @ 100 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
|
IPB65R125C7ATMA2MOSFET N-CH 650V 18A TO263-3 Infineon Technologies |
948 |
|
Tabla de datos |
CoolMOS™ C7 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 650 V | 18A (Tc) | 10V | 125mOhm @ 8.9A, 10V | 4V @ 440µA | 35 nC @ 10 V | ±20V | 1670 pF @ 400 V | - | 101W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
|
IPB015N04NGATMA1MOSFET N-CH 40V 120A D2PAK Infineon Technologies |
3,123 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 1.5mOhm @ 100A, 10V | 4V @ 200µA | 250 nC @ 10 V | ±20V | 20000 pF @ 20 V | - | 250W (Tc) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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