制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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SPI07N65C3XKSA1N-CHANNEL POWER MOSFET Infineon Technologies |
23,000 | - |
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CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27 nC @ 10 V | ±20V | 790 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
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IPI45N06S409AKSA2MOSFET N-CH 60V 45A TO262-3 Infineon Technologies |
0 | - |
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OptiMOS™ T2 | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Tc) | 10V | 9.4mOhm @ 45A, 10V | 4V @ 34µA | 47 nC @ 10 V | ±20V | 3785 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO262-3-1 |
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IPP60R360CFD7XKSA1MOSFET 600V TO220-3-1 Infineon Technologies |
0 | - |
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CoolMOS™ CFD7 | TO-220-3 | Bulk | Obsolete | - | MOSFET (Metal Oxide) | 600 V | - | - | - | - | - | ±20V | - | - | - | - | - | - | Through Hole | PG-TO220-3-1 |
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IPB65R380C6ATMA1MOSFET N-CH 650V 10.6A D2PAK Infineon Technologies |
0 | - |
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CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39 nC @ 10 V | ±20V | 710 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPP70N12S3L12AKSA1MOSFET N-CHANNEL_100+ Infineon Technologies |
0 | - |
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OptiMOS™ T | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120 V | 70A (Tc) | 4.5V, 10V | 12.1mOhm @ 70A, 10V | 2.4V @ 83µA | 77 nC @ 10 V | ±20V | 5550 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3-1 |
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IPP80N06S2L11AKSA2MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
0 | - |
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OptiMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 10.7mOhm @ 40A, 10V | 2V @ 93µA | 80 nC @ 10 V | ±20V | 2075 pF @ 25 V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPI70N12S3L12AKSA1MOSFET N-CHANNEL_100+ Infineon Technologies |
19,000 | - |
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OptiMOS™ T | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120 V | 70A (Tc) | 4.5V, 10V | 12.1mOhm @ 70A, 10V | 2.4V @ 83µA | 77 nC @ 10 V | ±20V | 5550 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO262-3-1 |
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IPI70N12S311AKSA1MOSFET N-CHANNEL_100+ Infineon Technologies |
15,500 | - |
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OptiMOS™ T | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120 V | 70A (Tc) | 10V | 11.6mOhm @ 70A, 10V | 4V @ 83µA | 65 nC @ 10 V | ±20V | 4355 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO262-3-1 |
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BSZ0910LSATMA1MOSFET N-CH 30V 18A/40A TSDSON Infineon Technologies |
13,733 | - |
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OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta), 40A (Tc) | 4.5V, 10V | 4.5mOhm @ 30A, 10V | 2V @ 250µA | 17 nC @ 10 V | ±20V | 1100 pF @ 15 V | - | 2.1W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8 FL |
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IRLHS6342TRPBFMOSFET N-CH 30V 8.7A/19A 6PQFN Infineon Technologies |
106,470 | - |
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HEXFET® | 6-PowerVDFN | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.7A (Ta), 19A (Tc) | 2.5V, 4.5V | 15.5mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 11 nC @ 4.5 V | ±12V | 1019 pF @ 25 V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-PQFN (2x2) |