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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPP100N06S205AKSA1MOSFET N-CH 55V 100A TO220-3 Infineon Technologies |
3,775 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 10V | 5mOhm @ 80A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 5110 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
BSB881N03LX3GXUMA1N-CHANNEL POWER MOSFET Infineon Technologies |
175,000 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPP80N06S2L05AKSA1MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
3,723 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 4.8mOhm @ 80A, 10V | 2V @ 250µA | 230 nC @ 10 V | ±20V | 5700 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IPB120N03S4L03ATMA1MOSFET N-CH 30V 120A D2PAK Infineon Technologies |
4,587 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 120A (Tc) | 4.5V, 10V | 3mOhm @ 100A, 10V | 2.2V @ 40µA | 72 nC @ 10 V | ±16V | 5300 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3 |
|
|
IPB80N04S2L03ATMA1MOSFET N-CH 40V 80A TO263-3 Infineon Technologies |
3,058 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 4.5V, 10V | 3.1mOhm @ 80A, 10V | 2V @ 250µA | 213 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
|
IPP60R380E6XKSA1MOSFET N-CH 600V 10.6A TO220-3 Infineon Technologies |
4,832 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 320µA | 32 nC @ 10 V | ±20V | 700 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
|
IPB80N08S406ATMA1MOSFET N-CH 80V 80A TO263-3 Infineon Technologies |
2,718 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 10V | 5.5mOhm @ 80A, 10V | 4V @ 90µA | 70 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3-2 |
|
IPI80N04S204AKSA2MOSFET N-CH 40V 80A TO262-3 Infineon Technologies |
296 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 3.7mOhm @ 80A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 5300 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
|
SPI07N60C3XKSA1MOSFET N-CH 600V 7.3A TO262-3 Infineon Technologies |
2,576 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27 nC @ 10 V | ±20V | 790 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
BSS169H6906XTSA1MOSFET N-CH 100V 170MA SOT23-3 Infineon Technologies |
43,881 |
|
Tabla de datos |
SIPMOS™ | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Last Time Buy | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 100 V | 170mA (Ta) | 0V, 10V | 6Ohm @ 170mA, 10V | 1.8V @ 50µA | 2.8 nC @ 7 V | ±20V | 68 pF @ 10 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-SOT23 |
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