制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPP80N06S207AKSA1MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
0 | - |
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OptiMOS™ | TO-220-3 | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 6.6mOhm @ 68A, 10V | 4V @ 180µA | 110 nC @ 10 V | ±20V | 3400 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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AUIRF9Z34N-INFAUTOMOTIVE HEXFET P CHANNEL Infineon Technologies |
1,317 | - |
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HEXFET® | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 55 V | 19A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | 620 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-220AB |
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IPB60R520CPN-CHANNEL POWER MOSFET Infineon Technologies |
2,996 | - |
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CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.8A (Tc) | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 31 nC @ 10 V | ±20V | 630 pF @ 100 V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPP084N06L3GXKSA1MOSFET N-CH 60V 50A TO220-3 Infineon Technologies |
0 | - |
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OptiMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 8.4mOhm @ 50A, 10V | 2.2V @ 34µA | 29 nC @ 4.5 V | ±20V | 4900 pF @ 30 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPU80R1K0CEAKMA1MOSFET N-CH 800V 5.7A TO251-3 Infineon Technologies |
0 | - |
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CoolMOS™ CE | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.7A (Tc) | 10V | 950mOhm @ 3.6A, 10V | 3.9V @ 250µA | 31 nC @ 10 V | ±20V | 785 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-341 |
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IPP80N06S4L05AKSA1MOSFET N-CH 60V 80A TO220-3 Infineon Technologies |
0 | - |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 4.5V, 10V | 5.1mOhm @ 80A, 10V | 2.2V @ 60µA | 110 nC @ 10 V | ±16V | 8180 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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BSC029N025SGN-CHANNEL POWER MOSFET Infineon Technologies |
4,999 | - |
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OptiMOS™ | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 24A (Ta), 100A (Tc) | 4.5V, 10V | 2.9mOhm @ 50A, 10V | 2V @ 80µA | 41 nC @ 5 V | ±20V | 5090 pF @ 15 V | - | 2.8W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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IPP120N06S403AKSA1MOSFET N-CH 60V 120A TO220-3 Infineon Technologies |
0 | - |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 120µA | 160 nC @ 10 V | ±20V | 13150 pF @ 25 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPA126N10N3GXKSA1MOSFET N-CH 100V 35A TO220-FP Infineon Technologies |
0 | - |
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OptiMOS™ | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 6V, 10V | 12.6mOhm @ 35A, 10V | 3.5V @ 45µA | 35 nC @ 10 V | ±20V | 2500 pF @ 50 V | - | 33W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220 Full Pack |
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IPP80N06S4L07AKSA2MOSFET N-CH 60V 80A TO220-3 Infineon Technologies |
0 | - |
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OptiMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 4.5V, 10V | 6.7mOhm @ 80A, 10V | 2.2V @ 40µA | 75 nC @ 10 V | ±16V | 5680 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3-1 |