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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFH8334TRPBFMOSFET N-CH 30V 14A/44A PQFN Infineon Technologies |
9,279 |
|
Tabla de datos |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 44A (Tc) | 4.5V, 10V | 9mOhm @ 20A, 10V | 2.35V @ 25µA | 15 nC @ 10 V | ±20V | 1180 pF @ 10 V | - | 3.2W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
|
IPD50N12S3L15ATMA1MOSFET N-CHANNEL_100+ Infineon Technologies |
0 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120 V | 50A (Tc) | 4.5V, 10V | 15mOhm @ 50A, 10V | 2.4V @ 60µA | 57 nC @ 10 V | ±20V | 7180 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-11 |
|
IPI80N06S4L07AKSA2MOSFET N-CH 60V 80A TO262-3 Infineon Technologies |
0 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 4.5V, 10V | 6.7mOhm @ 80A, 10V | 2.2V @ 40µA | 72 nC @ 10 V | ±16V | 5680 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
IPSA70R600P7SAKMA1MOSFET N-CH 700V 8.5A TO251-3 Infineon Technologies |
0 |
|
Tabla de datos |
CoolMOS™ P7 | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 700 V | 8.5A (Tc) | 10V | 600mOhm @ 1.8A, 10V | 3.5V @ 90µA | 10.5 nC @ 400 V | ±16V | 364 pF @ 400 V | - | 43.1W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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IPI90R1K2C3XKSA2MOSFET N-CH 900V 5.1A TO262-3 Infineon Technologies |
0 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 5.1A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28 nC @ 10 V | ±20V | 710 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
IPD50R1K4CEAUMA1MOSFET N-CH 500V 3.1A TO252-3 Infineon Technologies |
1,450 |
|
Tabla de datos |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.1A (Tc) | 13V | 1.4Ohm @ 900mA, 13V | 3.5V @ 70µA | 8.2 nC @ 10 V | ±20V | 178 pF @ 100 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
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BSZ058N03MSGATMA1MOSFET N-CH 30V 14A/40A 8TSDSON Infineon Technologies |
0 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 40A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2V @ 250µA | 40 nC @ 10 V | ±20V | 3100 pF @ 15 V | - | 2.1W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8 |
|
IRF3007PBFMOSFET N-CH 75V 75A TO220AB Infineon Technologies |
0 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 75A (Tc) | 10V | 12.6mOhm @ 48A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 3270 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRFI7446GPBFMOSFET N-CH 40V 80A TO220AB FP Infineon Technologies |
0 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 3.3mOhm @ 48A, 10V | 3.9V @ 100µA | 90 nC @ 10 V | ±20V | 3199 pF @ 25 V | - | 40.5W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB Full-Pak |
|
IPAW60R280CEXKSA1MOSFET N-CH 600V 19.3A TO220 Infineon Technologies |
0 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack, Variant | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 19.3A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43 nC @ 10 V | ±20V | 950 pF @ 100 V | - | 32W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220 Full Pack, Wide Creepage |
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