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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BUZ31HXKSA1MOSFET N-CH 200V 14.5A TO220-3 Infineon Technologies |
4,365 |
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Tabla de datos |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 14.5A (Tc) | 5V | 200mOhm @ 9A, 5V | 4V @ 1mA | - | ±20V | 1120 pF @ 25 V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
BSP318SL6327HTSA1MOSFET N-CH 60V 2.6A SOT223-4 Infineon Technologies |
3,608 |
|
Tabla de datos |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 2.6A (Ta) | 4.5V, 10V | 90mOhm @ 2.6A, 10V | 2V @ 20µA | 20 nC @ 10 V | ±20V | 380 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4-21 |
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IRFU7440PBFMOSFET N-CH 40V 90A IPAK Infineon Technologies |
2,943 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 6V, 10V | 2.4mOhm @ 90A, 10V | 3.9V @ 100µA | 134 nC @ 10 V | ±20V | 4610 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
|
IRFB23N15DPBFMOSFET N-CH 150V 23A TO220AB Infineon Technologies |
4,892 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 23A (Tc) | 10V | 90mOhm @ 14A, 10V | 5.5V @ 250µA | 56 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 3.8W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF1404ZSPBFMOSFET N-CH 40V 180A D2PAK Infineon Technologies |
2,200 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 10V | 3.7mOhm @ 75A, 10V | 4V @ 150µA | 150 nC @ 10 V | ±20V | 4340 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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SPP35N10MOSFET N-CH 100V 35A TO220-3 Infineon Technologies |
3,072 |
|
Tabla de datos |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 10V | 44mOhm @ 26.4A, 10V | 4V @ 83µA | 65 nC @ 10 V | ±20V | 1570 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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SPD100N03S2L-04MOSFET N-CH 30V 100A TO252-5 Infineon Technologies |
2,563 |
|
Tabla de datos |
OptiMOS™ | TO-252-5, DPAK (4 Leads + Tab), TO-252AD | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 4.2mOhm @ 50A, 10V | 2V @ 100µA | 89.7 nC @ 10 V | ±20V | 3320 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-5-1 |
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IPS80R600P7AKMA1MOSFET N-CH 800V 8A TO251-3 Infineon Technologies |
4,315 |
|
Tabla de datos |
CoolMOS™ P7 | TO-251-3 Stub Leads, IPAK | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 3.5V @ 170µA | 20 nC @ 10 V | ±20V | 570 pF @ 500 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-342 |
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IPP45N06S409AKSA2MOSFET N-CH 60V 45A TO220-3 Infineon Technologies |
3,951 |
|
Tabla de datos |
OptiMOS™ T2 | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Tc) | 10V | 9.4mOhm @ 45A, 10V | 4V @ 34µA | 47 nC @ 10 V | ±20V | 3785 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3-1 |
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IPP80N06S2L06AKSA1MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
2,537 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 6.3mOhm @ 69A, 10V | 2V @ 180µA | 150 nC @ 10 V | ±20V | 3800 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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