制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPS60R210PFD7SAKMA1MOSFET N-CH 650V 16A TO251-3 Infineon Technologies |
0 | - |
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CoolMOS™PFD7 | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 16A (Tc) | 10V | 210mOhm @ 4.9A, 10V | 4.5V @ 240µA | 23 nC @ 10 V | ±20V | 1015 pF @ 400 V | - | 64W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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IPI50N12S3L15AKSA1MOSFET N-CHANNEL_100+ Infineon Technologies |
15,500 | - |
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OptiMOS™ T | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120 V | 50A (Tc) | 4.5V, 10V | 15.7mOhm @ 50A, 10V | 2.4V @ 60µA | 57 nC @ 10 V | ±20V | 4180 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO262-3-1 |
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IPP50N12S3L15AKSA1MOSFET N-CHANNEL_100+ Infineon Technologies |
12,500 | - |
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OptiMOS™ T | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120 V | 50A (Tc) | 4.5V, 10V | 15.7mOhm @ 50A, 10V | 2.4V @ 60µA | 57 nC @ 10 V | ±20V | 4180 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3-1 |
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IRF8304MTRPBFIRF8304 - 12V-300V N-CHANNEL POW Infineon Technologies |
4,408 | - |
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HEXFET® | DirectFET™ Isometric MX | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 28A (Ta), 170A (Tc) | 4.5V, 10V | 2.2mOhm @ 28A, 10V | 2.35V @ 100µA | 42 nC @ 4.5 V | ±20V | 4700 pF @ 15 V | - | 2.8W (Ta), 100W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric MX |
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IPI80N06S4L05AKSA1MOSFET N-CH 60V 80A TO262-3 Infineon Technologies |
4,300 | - |
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OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 4.5V, 10V | 5.1mOhm @ 80A, 10V | 2.2V @ 60µA | 110 nC @ 10 V | ±16V | 8180 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IRFZ46ZSTRLPBFMOSFET N-CH 55V 51A D2PAK Infineon Technologies |
0 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 51A (Tc) | 10V | 13.6mOhm @ 31A, 10V | 4V @ 250µA | 46 nC @ 10 V | ±20V | 1460 pF @ 25 V | - | 82W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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BUZ111SL-E3045AN-CHANNEL POWER MOSFET Infineon Technologies |
1,830 | - |
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 80A | - | - | - | - | - | - | - | 300W | 175°C | - | - | Surface Mount | TO-263 |
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BUZ111SN-CHANNEL POWER MOSFET Infineon Technologies |
1,702 | - |
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SIPMOS® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 8mOhm @ 80A, 10V | 4V @ 240µA | 185 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IRFH8321TRPBFMOSFET N CH 30V 21A PQFN5X6 Infineon Technologies |
0 | - |
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HEXFET® | 8-TQFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta), 83A (Tc) | 4.5V, 10V | 4.9mOhm @ 20A, 10V | 2V @ 50µA | 59 nC @ 10 V | ±20V | 2600 pF @ 10 V | - | 3.4W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
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BSZ0911LSATMA1MOSFET N-CH 30V 12A/40A TSDSON Infineon Technologies |
23,299 | - |
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OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 40A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | 2V @ 250µA | 10 nC @ 10 V | ±20V | 670 pF @ 15 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8 FL |