Hola!! Ahora
+8619886240609(Alice)
+8619886240609(Alice)
Mi cuenta
FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPS80R750P7AKMA1MOSFET N-CH 800V 7A TO251-3 Infineon Technologies |
0 |
|
Tabla de datos |
CoolMOS™ P7 | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 7A (Tc) | 10V | 750mOhm @ 2.7A, 10V | 3.5V @ 140µA | 17 nC @ 10 V | ±20V | 460 pF @ 500 V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
SPI21N10MOSFET N-CH 100V 21A TO262-3 Infineon Technologies |
0 |
|
Tabla de datos |
SIPMOS® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 21A (Tc) | 10V | 80mOhm @ 15A, 10V | 4V @ 44µA | 38.4 nC @ 10 V | ±20V | 865 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
BSO083N03MSGXUMA1MOSFET N-CH 30V 11A 8DSO Infineon Technologies |
2,072 |
|
Tabla de datos |
OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 8.3mOhm @ 14A, 10V | 2V @ 250µA | 27 nC @ 10 V | ±20V | 2100 pF @ 15 V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
|
IPAW70R600CEXKSA1MOSFET N-CH 700V 10.5A TO220-31 Infineon Technologies |
0 |
|
Tabla de datos |
CoolMOS™ CE | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 10.5A (Tc) | 10V | 600mOhm @ 1A, 10V | 3.5V @ 210µA | 22 nC @ 10 V | ±20V | 474 pF @ 100 V | - | 86W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-FP |
|
IPN50R3K0CEATMA1MOSFET N-CH 500V 2.6A SOT223 Infineon Technologies |
6,541 |
|
Tabla de datos |
CoolMOS™ CE | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.6A (Tc) | 13V | 3Ohm @ 400mA, 13V | 3.5V @ 30µA | 4.3 nC @ 10 V | ±20V | 84 pF @ 100 V | - | 5W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-3 |
|
SPD50N03S2L-06MOSFET N-CH 30V 50A TO252-3 Infineon Technologies |
0 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 6.4mOhm @ 50A, 10V | 2V @ 85µA | 68 nC @ 10 V | ±20V | 2530 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
SPU02N60S5BKMA1MOSFET N-CH 600V 1.8A TO251-3 Infineon Technologies |
0 |
|
Tabla de datos |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 5.5V @ 80µA | 9.5 nC @ 10 V | ±20V | 240 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-21 |
|
IPB35N12S3L26ATMA1MOSFET N-CHANNEL_100+ Infineon Technologies |
0 |
|
Tabla de datos |
OptiMOS™ T | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120 V | 35A (Tc) | 4.5V, 10V | 26.3mOhm @ 35A, 10V | 2.4V @ 39µA | 30 nC @ 10 V | ±20V | 2700 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3-2 |
|
IPP60R520C6XKSA1MOSFET N-CH 600V 8.1A TO220-3 Infineon Technologies |
0 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 8.1A (Tc) | 10V | 520mOhm @ 2.8A, 10V | 3.5V @ 230µA | 23.4 nC @ 10 V | ±20V | 512 pF @ 100 V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
SPD07N60S5BTMA1N-CHANNEL POWER MOSFET Infineon Technologies |
1,019 |
|
Tabla de datos |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 5.5V @ 350µA | 35 nC @ 10 V | ±20V | 970 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252 |
- Envío rápido La puerta rápida y convenienteEntrega a domicilio.
- Seguridad de pago Más de 5 diferentes métodos de pago seguro.
- Estricto Control de calidad 365 días de servicio post-venta y garantía
- Simple y profesional Soluciones de adquisición electrónica integral.
