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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPD40N03S4L08ATMA1MOSFET N-CH 30V 40A TO252-31 Infineon Technologies |
0 |
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Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 8.3mOhm @ 40A, 10V | 2.2V @ 13µA | 20 nC @ 10 V | ±16V | 1520 pF @ 15 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-11 |
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IPAW70R950CEXKSA1MOSFET N-CH 700V 7.4A TO220-3-31 Infineon Technologies |
0 |
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Tabla de datos |
CoolMOS™ CE | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 7.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 150µA | 15.3 nC @ 10 V | ±20V | 328 pF @ 100 V | - | 68W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-FP |
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AUIRLL024NTRMOSFET N-CH 55V 3.1A SOT223 Infineon Technologies |
0 |
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Tabla de datos |
HEXFET® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 3.1A (Ta) | 4V, 10V | 65mOhm @ 3.1A, 10V | 2V @ 250µA | 15.6 nC @ 5 V | ±16V | 510 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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IPP45P03P4L11AKSA1MOSFET P-CH 30V 45A TO220-3 Infineon Technologies |
0 |
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Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 45A (Tc) | 4.5V, 10V | 11.1mOhm @ 45A, 10V | 2V @ 85µA | 55 nC @ 10 V | +5V, -16V | 3770 pF @ 25 V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IRF3709PBFMOSFET N-CH 30V 90A TO220AB Infineon Technologies |
0 |
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Tabla de datos |
HEXFET® | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 41 nC @ 5 V | ±20V | 2672 pF @ 16 V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IPP042N03LGXKSA1MOSFET N-CH 30V 70A TO220-3 Infineon Technologies |
0 |
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Tabla de datos |
OptiMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 70A (Tc) | 4.5V, 10V | 4.2mOhm @ 30A, 10V | 2.2V @ 250µA | 38 nC @ 10 V | ±20V | 3900 pF @ 15 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IRF7326D2TRPBFMOSFET P-CH 30V 3.6A 8SO Infineon Technologies |
2,090 |
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Tabla de datos |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.6A (Ta) | 4.5V, 10V | 100mOhm @ 1.8A, 10V | 1V @ 250µA | 25 nC @ 10 V | ±20V | 440 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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BUZ22E3045AN-CHANNEL POWER MOSFET Infineon Technologies |
53,682 |
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPP80N06S405AKSA2MOSFET N-CHANNEL_55/60V Infineon Technologies |
0 |
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Tabla de datos |
OptiMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 5.7mOhm @ 80A, 10V | 4V @ 60µA | 81 nC @ 10 V | ±20V | 6500 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3-1 |
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SPB04N50C3ATMA1MOSFET N-CH 560V 4.5A TO263-3 Infineon Technologies |
0 |
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Tabla de datos |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 560 V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 22 nC @ 10 V | ±20V | 470 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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