制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPSA70R600CEAKMA1MOSFET N-CH 700V 10.5A TO251-3 Infineon Technologies |
0 | - |
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- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 10.5A (Tc) | 10V | 600mOhm @ 1A, 10V | 3.5V @ 210µA | 22 nC @ 10 V | ±20V | 474 pF @ 100 V | - | 86W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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BUZ73AHXKSA1N-CHANNEL POWER MOSFET Infineon Technologies |
11,540 | - |
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SIPMOS® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.5A (Tc) | 10V | 600mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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BSF083N03LQGN-CHANNEL POWER MOSFET Infineon Technologies |
6,000 | - |
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OptiMOS™ | 3-WDSON | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta), 53A (Tc) | 4.5V, 10V | 8.3mOhm @ 20A, 10V | 2.2V @ 250µA | 18 nC @ 10 V | ±20V | 1800 pF @ 15 V | - | 2.2W (Ta), 36W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
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BUZ73ALHXKSA1MOSFET N-CH 200V 5.5A TO220-3 Infineon Technologies |
0 | - |
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SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.5A (Tc) | 5V | 600mOhm @ 3.5A, 5V | 2V @ 1mA | - | ±20V | 840 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPS65R950C6AKMA1MOSFET N-CH 650V 4.5A TO251-3 Infineon Technologies |
0 | - |
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CoolMOS™ | TO-251-3 Stub Leads, IPAK | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 4.5A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 200µA | 15.3 nC @ 10 V | ±20V | 328 pF @ 100 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-11 |
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BSP125L6327HTSA1MOSFET N-CH 600V 120MA SOT223-4 Infineon Technologies |
0 | - |
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SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 120mA (Ta) | 4.5V, 10V | 45Ohm @ 120mA, 10V | 2.3V @ 94µA | 6.6 nC @ 10 V | ±20V | 150 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4-21 |
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SPS01N60C3BKMA10.8A, 600V, N-CHANNEL MOSFET, T Infineon Technologies |
30,000 | - |
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CoolMOS™ | TO-251-3 Stub Leads, IPAK | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 800mA (Tc) | 10V | 6Ohm @ 500mA, 10V | 3.9V @ 250µA | 5 nC @ 10 V | ±20V | 100 pF @ 25 V | - | 11W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-11 |
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SPS02N60C3BKMA1LOW POWER_LEGACY Infineon Technologies |
0 | - |
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CoolMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 3.9V @ 80µA | 12.5 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-11 |
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BSO065N03MSGXUMA1MOSFET N-CH 30V 13A 8DSO Infineon Technologies |
0 | - |
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OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4.5V, 10V | 6.5mOhm @ 16A, 10V | 2V @ 250µA | 40 nC @ 10 V | ±20V | 3100 pF @ 15 V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
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IPP230N06L3GN-CHANNEL POWER MOSFET Infineon Technologies |
9,620 | - |
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OptiMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 4.5V, 10V | 23mOhm @ 30A, 10V | 2.2V @ 11µA | 10 nC @ 4.5 V | ±20V | 1600 pF @ 30 V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |