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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPD50N06S4L08ATMA1MOSFET N-CH 60V 50A TO252-3 Infineon Technologies |
0 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 7.8mOhm @ 50A, 10V | 2.2V @ 35µA | 64 nC @ 10 V | ±16V | 4780 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
SPP03N60C3XKSA1LOW POWER_LEGACY Infineon Technologies |
0 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
BSP129L6327HTSA1MOSFET N-CH 240V 350MA SOT223-4 Infineon Technologies |
0 |
|
Tabla de datos |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 240 V | 350mA (Ta) | 0V, 10V | 6Ohm @ 350mA, 10V | 1V @ 108µA | 5.7 nC @ 5 V | ±20V | 108 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4-21 |
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SPB80N03S2L0580A, 30V, N-CHANNEL, MOSFET Infineon Technologies |
72,559 |
|
Tabla de datos |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 4.9mOhm @ 55A, 10V | 2V @ 110µA | 89.7 nC @ 10 V | ±20V | 3320 pF @ 25 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-2 |
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SPB80N03S2L-05MOSFET N-CH 30V 80A TO263-3 Infineon Technologies |
0 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 4.9mOhm @ 55A, 10V | 2V @ 110µA | 89.7 nC @ 10 V | ±20V | 3320 pF @ 25 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
SPP04N60C2N-CHANNEL POWER MOSFET Infineon Technologies |
19,000 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 5.5V @ 200µA | 22.9 nC @ 10 V | ±20V | 580 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IPI45N06S409AKSA1MOSFET N-CH 60V 45A TO262-3 Infineon Technologies |
0 |
|
Tabla de datos |
OptiMOS™ T2 | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Tc) | 10V | 9.4mOhm @ 45A, 10V | 4V @ 34µA | 47 nC @ 10 V | ±20V | 3785 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
IPP45N06S409AKSA1MOSFET N-CH 60V 45A TO220-3 Infineon Technologies |
0 |
|
Tabla de datos |
OptiMOS™ T2 | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Tc) | 10V | 9.4mOhm @ 45A, 10V | 4V @ 34µA | 47 nC @ 10 V | ±20V | 3785 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
BSC883N03MSGN-CHANNEL POWER MOSFET Infineon Technologies |
13,343 |
|
Tabla de datos |
OptiMOS™ 3M | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 34 V | 19A (Ta), 98A (Tc) | 4.5V, 10V | 3.8mOhm @ 30A, 10V | 2V @ 250µA | 41 nC @ 10 V | ±20V | 3200 pF @ 15 V | - | 2.5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8 |
|
|
BSC884N03MSGN-CHANNEL POWER MOSFET Infineon Technologies |
9,149 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 34 V | 17A (Ta), 85A (Tc) | 4.5V, 10V | 4.5mOhm @ 30A, 10V | 2V @ 250µA | 34 nC @ 10 V | ±20V | 2700 pF @ 15 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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