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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    MSCSM170HRM233AG

    MSCSM170HRM233AG

    MOSFET 4N-CH 1700V/1200V 124A

    Microchip Technology

    10
    RFQ
    MSCSM170HRM233AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 124A (Tc), 89A (Tc) 22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V 3.2V @ 5mA, 2.8V @ 3mA 356nC @ 20V, 232nC @ 20V 6600pF @ 1000V, 3020pF @ 1000V 602W (Tc), 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    FF6MR20W2M1HB70BPSA1

    FF6MR20W2M1HB70BPSA1

    FF6MR20W2M1HB70BPSA1

    Infineon Technologies

    15
    RFQ
    FF6MR20W2M1HB70BPSA1

    Tabla de datos

    EasyPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 2000V (2kV) 160A (Tj) 8.1mOhm @ 160A, 18V 5.15V @ 112mA 780nC @ 3V 24100pF @ 1.2kV - -40°C ~ 175°C (TJ) - - Chassis Mount -
    F3L6MR20W2M1HB70BPSA1

    F3L6MR20W2M1HB70BPSA1

    F3L6MR20W2M1HB70BPSA1

    Infineon Technologies

    15
    RFQ
    F3L6MR20W2M1HB70BPSA1

    Tabla de datos

    EasyPACK™ Module Tray Active Silicon Carbide (SiC) 4 N-Channel Silicon Carbide (SiC) 2000V (2kV) 155A (Tj) 8.7mOhm @ 100A, 18V 5.15V @ 112mA 297nC @ 18V 24100pF @ 1.2kV - -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120HRM163AG

    MSCSM120HRM163AG

    MOSFET 4N-CH 1200V/700V 173A

    Microchip Technology

    10
    RFQ
    MSCSM120HRM163AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV), 700V 173A (Tc), 124A (Tc) 16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V 2.8V @ 6mA, 2.4V @ 4mA 464nC, 215nC @ 20V 6040pF @ 1000V, 4500pF @ 700V 745W (Tc), 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    CAB6R0A23GM4

    CAB6R0A23GM4

    MOSFET 2N-CH 2300V 150A

    Wolfspeed, Inc.

    6
    RFQ
    CAB6R0A23GM4

    Tabla de datos

    - Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 2300V (2.3kV) 150A 8.4mOhm @ 200A, 15V 4V @ 95mA 735nC @ 15V 30500pF @ 1.5kV 610W -40°C ~ 150°C (TJ) - - Chassis Mount -
    FF3MR12KM1HHPSA1

    FF3MR12KM1HHPSA1

    MOSFET 2N-CH 1200V 190A AG62MMHB

    Infineon Technologies

    19
    RFQ
    FF3MR12KM1HHPSA1

    Tabla de datos

    CoolSiC™ Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 190A (Tc) 4.44mOhm @ 280A, 18V 5.1V @ 112mA 800nC @ 18V 24200pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-62MMHB
    FF3MR12KM1HPHPSA1

    FF3MR12KM1HPHPSA1

    MOSFET 2N-CH 1200V 220A AG62MMHB

    Infineon Technologies

    13
    RFQ
    FF3MR12KM1HPHPSA1

    Tabla de datos

    CoolSiC™ Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 220A 4.44mOhm @ 280A, 18V 5.1V @ 112mA 800nC @ 18V 24200pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-62MMHB
    APTM100A13SCG

    APTM100A13SCG

    MOSFET 2N-CH 1000V 65A SP6

    Microchip Technology

    4
    RFQ

    -

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1000V (1kV) 65A 156mOhm @ 32.5A, 10V 5V @ 6mA 562nC @ 10V 15200pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    FF5MR20KM1HHPSA1

    FF5MR20KM1HHPSA1

    MOSFET

    Infineon Technologies

    9
    RFQ
    FF5MR20KM1HHPSA1

    Tabla de datos

    - - Tray Active - - - - - - - - - - - - - - -
    FF4MR20KM1HPHPSA1

    FF4MR20KM1HPHPSA1

    MOSFET 2N-CH 2000V AG-62MMHB

    Infineon Technologies

    10
    RFQ
    FF4MR20KM1HPHPSA1

    Tabla de datos

    C, CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 2000V (2kV) 280A (Tc) 5.3mOhm @ 300A, 18V 5.15V @ 168mA 1170nC @ 18V 36100pF @ 1.2kV - -40°C ~ 175°C - - Chassis Mount AG-62MMHB
    BSM450D12P4G102

    BSM450D12P4G102

    MOSFET 2N-CH 1200V 447A MODULE

    Rohm Semiconductor

    4
    RFQ
    BSM450D12P4G102

    Tabla de datos

    - Module Box Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 447A (Tc) - 4.8V @ 218.4mA - 44000pF @ 10V 1.45kW (Tc) 175°C (TJ) - - Chassis Mount Module
    HAS175M12BM3

    HAS175M12BM3

    MOSFET 2N-CH 1200V 175A

    Wolfspeed, Inc.

    3
    RFQ
    HAS175M12BM3

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 175A - - - - - - - - Chassis Mount -
    FF1MR12KM1HHPSA1

    FF1MR12KM1HHPSA1

    MOSFET

    Infineon Technologies

    12
    RFQ
    FF1MR12KM1HHPSA1

    Tabla de datos

    - - Tray Active - - - - - - - - - - - - - - -
    FF1MR12KM1HPHPSA1

    FF1MR12KM1HPHPSA1

    MOSFET

    Infineon Technologies

    16
    RFQ
    FF1MR12KM1HPHPSA1

    Tabla de datos

    - - Tray Active - - - - - - - - - - - - - - -
    MSCSM170HRM11NG

    MSCSM170HRM11NG

    MOSFET 4N-CH 1700V/1200V 226A

    Microchip Technology

    4
    RFQ
    MSCSM170HRM11NG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 226A (Tc), 163A (Tc) 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V 3.2V @ 10mA, 2.8V @ 6mA 712nC @ 20V, 464nC @ 20V 13200pF @ 1000V, 6040pF @ 1000V 1.012kW (Tc), 662W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120AM042T6AG

    MSCSM120AM042T6AG

    MOSFET 2N-CH 1200V 495A

    Microchip Technology

    4
    RFQ
    MSCSM120AM042T6AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 18mA 1392nC @ 20V 18100pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120HRM08NG

    MSCSM120HRM08NG

    MOSFET 4N-CH 1200V/700V 317A

    Microchip Technology

    8
    RFQ
    MSCSM120HRM08NG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV), 700V 317A (Tc), 227A (Tc) 7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V 2.8V @ 12mA, 2.4V @ 8mA 928nC @ 20V, 430nC @ 20V 12100pF @ 1000V, 9000pF @ 700V 1.253kW (Tc), 613W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    NVVR26A120M1WST

    NVVR26A120M1WST

    MOSFET 2N-CH 1200V AHPM15-CDA

    onsemi

    6
    RFQ
    NVVR26A120M1WST

    Tabla de datos

    - 15-PowerDIP Module (2.441", 62.00mm) Tube Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 400A (Tj) 2.6mOhm @ 400A, 20V 3.2V @ 150mA 1.75µC @ 20V 31700pF @ 800V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole AHPM15-CDA
    ADP46075W3

    ADP46075W3

    MOSFET 6N-CH 750V 485A ACEPACK

    STMicroelectronics

    5
    RFQ
    ADP46075W3

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 6 N-Channel - 750V 485A (Tj) 2.05mOhm @ 460A, 18V 4.4V @ 40mA 984nC @ 18V 27050pF @ 400V 704W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount ACEPACK
    MSCSM170HRM075NG

    MSCSM170HRM075NG

    MOSFET 4N-CH 1700V/1200V 337A

    Microchip Technology

    7
    RFQ
    MSCSM170HRM075NG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 337A (Tc), 317A (Tc) 7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V 3.2V @ 15mA, 2.8V @ 12mA 1068nC @ 20V, 928nC @ 20V 19800pF @ 1000V, 12100pF @ 1000V 1.492kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    Total 5737 Record«Prev1... 137138139140141142143144...287Next»
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