Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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SIDC24D30SIC3DIODE SIL CARB 300V 10A WAFER Infineon Technologies |
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- | Die | Bulk | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 300 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 300 V | 600pF @ 1V, 1MHz | - | - | Surface Mount | Sawn on foil | -55°C ~ 175°C |
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SDT12S60DIODE SIL CARB 600V 12A TO220-2 Infineon Technologies |
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CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 450pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
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SIDC50D60C6X1SA1DIODE GP 600V 200A WAFER Infineon Technologies |
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- | Die | Bulk | Discontinued at Digi-Key | Standard | 600 V | 200A | 1.9 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
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SIDC53D120H8X1SA1DIODE GP 1.2KV 100A WAFER Infineon Technologies |
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- | Die | Bulk | Discontinued at Digi-Key | Standard | 1200 V | 100A | 1.97 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
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SIDC46D170HX1SA2DIODE GP 1.7KV 75A WAFER Infineon Technologies |
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- | Die | Bulk | Discontinued at Digi-Key | Standard | 1700 V | 75A | 1.8 V @ 75 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1700 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
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IDY10S120XKSA1DIODE SIC 1.2KV 5A TO247HC-3 Infineon Technologies |
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CoolSiC™+ | TO-247-3 Variant | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 1200 V | 250pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247HC-3 | -55°C ~ 175°C |
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IDC15S120C5X1SA1IC DIODE EMITTER CTLR WAFER Infineon Technologies |
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- | Die | Bulk | Active | - | - | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil | - |
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SIDC59D170HX1SA2DIODE GP 1.7KV 100A WAFER Infineon Technologies |
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- | Die | Bulk | Discontinued at Digi-Key | Standard | 1700 V | 100A | 1.8 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1700 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
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GATELEAD28134XPSA1DUMMY 57 Infineon Technologies |
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- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IDC73D120T6MX1SA2DIODE GP 1.2KV 150A WAFER Infineon Technologies |
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- | Die | Bulk | Discontinued at Digi-Key | Standard | 1200 V | 150A | 2.05 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 26 µA @ 1200 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |