Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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SIDC78D170HX1SA1DIODE GP 1.7KV 150A WAFER Infineon Technologies |
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- | Die | Bulk | Discontinued at Digi-Key | Standard | 1700 V | 150A | 1.8 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1700 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
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SIDC85D170HX1SA2DIODE GP 1.7KV 150A WAFER Infineon Technologies |
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- | Die | Bulk | Discontinued at Digi-Key | Standard | 1700 V | 150A | 1.8 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1700 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
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IDY15S120XKSA1DIODE SIC 1.2KV 7.5A TO247HC-3 Infineon Technologies |
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CoolSiC™+ | TO-247-3 Variant | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 7.5A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 1200 V | 375pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247HC-3 | -55°C ~ 150°C |
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SIDC105D120H8X1SA1DIODE GP 1.2KV 200A WAFER Infineon Technologies |
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- | Die | Bulk | Discontinued at Digi-Key | Standard | 1200 V | 200A | 1.41 V @ 45 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
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IDC20S120C5X1SA1IC DIODE EMITTER CTLR WAFER Infineon Technologies |
0 |
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- |
- | Die | Bulk | Active | - | - | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil | - |
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GATELEAD28133HPSA1ACCY GATE LEAD FOR MODULE Infineon Technologies |
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- |
* | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SIDC110D170HX1SA2DIODE GP 1.7KV 200A WAFER Infineon Technologies |
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- | Die | Bulk | Discontinued at Digi-Key | Standard | 1700 V | 200A | 1.8 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1700 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
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GLPB3460G1K1457XPSA1THYR / DIODE MODULE DK Infineon Technologies |
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- |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SIDC161D170HX1SA2DIODE GP 1.7KV 300A WAFER Infineon Technologies |
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- | Die | Bulk | Discontinued at Digi-Key | Standard | 1700 V | 300A | 1.8 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1700 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
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GATELEAD1110008XPSA1HIGH POWER THYR / DIO Infineon Technologies |
0 |
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- |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |