Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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IDC10D120T6MX1SA1DIODE GP 1.2KV 15A WAFER Infineon Technologies |
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- | Die | Bulk | Obsolete | Standard | 1200 V | 15A | 2.05 V @ 15 A | Standard Recovery >500ns, > 200mA (Io) | - | 3.5 µA @ 1200 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
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SDD04S60DIODE SIL CARB 600V 4A TO252-31 Infineon Technologies |
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CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 4A | 1.9 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 150pF @ 0V, 1MHz | - | - | Surface Mount | PG-TO252-3-11 | -55°C ~ 175°C |
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IDD04S60CBUMA1DIODE SIC 600V 5.6A TO252-31 Infineon Technologies |
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CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 5.6A | 1.9 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 130pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO252-3-11 | -55°C ~ 175°C |
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IDD12SG60CXTMA2DIODE SIL CARB 600V 12A TO252-3 Infineon Technologies |
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CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 12A | 2.1 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 600 V | 310pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
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SIDC14D120H6X1SA1DIODE GP 1.2KV 25A WAFER Infineon Technologies |
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- | Die | Bulk | Discontinued at Digi-Key | Standard | 1200 V | 25A | 1.6 V @ 25 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
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IDC05S120C5X1SA1IC DIODE EMITTER CTLR WAFER Infineon Technologies |
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- | Die | Bulk | Active | - | - | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil | - |
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SDP06S60DIODE SIL CARB 600V 6A TO220-3-1 Infineon Technologies |
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- | TO-220-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 300pF @ 0V, 1MHz | - | - | Through Hole | PG-TO220-3-1 | -55°C ~ 175°C |
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SDT06S60DIODE SIL CARB 600V 6A TO220-2-2 Infineon Technologies |
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CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 300pF @ 0V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
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IDB10S60CDIODE SIL CARB 600V 10A TO263-3 Infineon Technologies |
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CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 600 V | 480pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-3-2 | -55°C ~ 175°C |
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SIDC20D60C6DIODE GP 600V 75A WAFER Infineon Technologies |
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- | Die | Bulk | Discontinued at Digi-Key | Standard | 600 V | 75A | 1.9 V @ 75 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |