Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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IDW24G65C5BXKSA2DIODE SIL CARB 650V 12A TO247-3 Infineon Technologies |
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CoolSiC™+ | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 650 V | 360pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |
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SIDC26D60C6DIODE GP 600V 100A WAFER Infineon Technologies |
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- | Die | Bulk | Discontinued at Digi-Key | Standard | 600 V | 100A | 1.9 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
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IDC28D120T6MX1SA2DIODE GP 1.2KV 50A WAFER Infineon Technologies |
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- | Die | Bulk | Obsolete | Standard | 1200 V | 50A | 2.05 V @ 50 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1200 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
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SIDC30D60E6X1SA1DIODE GP 600V 75A WAFER Infineon Technologies |
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- | Die | Bulk | Obsolete | Standard | 600 V | 75A | 1.25 V @ 75 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
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IDC10S120C5X1SA1IC DIODE EMITTER CTLR WAFER Infineon Technologies |
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- | Die | Bulk | Active | - | - | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil | - |
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AIDK16S65C5ATMA1SIC_DISCRETE PG-TO263-2 Infineon Technologies |
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CoolSiC™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 483pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | PG-TO263-2 | -40°C ~ 175°C |
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SIDC32D170HX1SA3DIODE GP 1.7KV 50A WAFER Infineon Technologies |
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- | Die | Bulk | Discontinued at Digi-Key | Standard | 1700 V | 50A | 1.8 V @ 50 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1700 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
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IDC40D120T6MX1SA4DIODE GP 1.2KV 75A WAFER Infineon Technologies |
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- | Die | Bulk | Obsolete | Standard | 1200 V | 75A | 2.05 V @ 75 A | Standard Recovery >500ns, > 200mA (Io) | - | 14 µA @ 1200 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
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SIDC42D120H8X1SA3DIODE GP 1.2KV 75A WAFER Infineon Technologies |
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- | Die | Bulk | Discontinued at Digi-Key | Standard | 1200 V | 75A | 1.97 V @ 50 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
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AIDW40S65C5XKSA1DIODE SIL CARB 650V 40A TO247-3 Infineon Technologies |
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CoolSiC™ | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 40A | 1.7 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 1138pF @ 1V, 1MHz | Automotive | AEC-Q100/101 | Through Hole | PG-TO247-3-41 | -40°C ~ 175°C |