Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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IDH03G65C5XKSA2DIODE SIL CARB 650V 3A TO220-2-1 Infineon Technologies |
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CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 3A | 1.7 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 100pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
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IDDD06G65C6XTMA1DIODE SIL CARB 650V 18A HDSOP-10 Infineon Technologies |
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CoolSiC™+ | 10-PowerSOP Module | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 18A | - | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 420 V | 302pF @ 1V, 1MHz | - | - | Surface Mount | PG-HDSOP-10-1 | -55°C ~ 175°C |
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SIDC03D120H6X1SA3DIODE GP 1.2KV 3A WAFER Infineon Technologies |
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- | Die | Bulk | Discontinued at Digi-Key | Standard | 1200 V | 3A | 1.6 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
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IDK05G65C5XTMA2DIODE SIL CARB 650V 5A TO263-2 Infineon Technologies |
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CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 5A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 830 µA @ 650 V | 160pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
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IDV03S60CXKSA1DIODE SIL CARB 600V 3A TO220-2FP Infineon Technologies |
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CoolSiC™+ | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 3A | 1.9 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 600 V | 90pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2 Full Pack | -55°C ~ 175°C |
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IDH05G65C5XKSA2DIODE SIL CARB 650V 5A TO220-2 Infineon Technologies |
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CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 160pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
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GLHUELSE1626XPSA1DUMMY 57 Infineon Technologies |
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- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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GLHUELSE1627XPSA1DUMMY 57 Infineon Technologies |
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- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IDP23013XUMA1IC AC/DC DGTL PLATFORM 16SOIC Infineon Technologies |
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* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SIDC09D60E6 UNSAWNDIODE GP 600V 20A WAFER Infineon Technologies |
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- | Die | Bulk | Discontinued at Digi-Key | Standard | 600 V | 20A | 1.7 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 27 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |