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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AIMCQ120R020M1TXTMA1SIC_DISCRETE |
4,760 |
|
- |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 116A (Tc) | 18V, 20V | 25mOhm @ 43A, 20V | 5.1V @ 13.7mA | 82 nC @ 20 V | +25V, -10V | 2667 pF @ 800 V | - | 577W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
|
|
IPQC60T010S7AXTMA1AUTOMOTIVE_COOLMOS |
2,664 |
|
- |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 174A (Tc) | 12V | 10mOhm @ 50A, 12V | 4.5V @ 3.06mA | 318 nC @ 12 V | ±20V | 11986 pF @ 300 V | - | 694W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22-101 |
|
|
IPDQ60T010S7AXTMA1AUTOMOTIVE_COOLMOS |
3,043 |
|
- |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 174A (Tc) | 12V | 10mOhm @ 50A, 12V | 4.5V @ 3.06mA | 318 nC @ 12 V | ±20V | 11986 pF @ 300 V | - | 694W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22-1 |
|
|
SCT020W120G3-4AGAUTOMOTIVE-GRADE SILICON CARBIDE |
2,220 |
|
Tabla de datos |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SCT020HU120G3AGAUTOMOTIVE-GRADE SILICON CARBIDE |
2,975 |
|
Tabla de datos |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SCT012H90G3AGH2PAK-7 |
3,214 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 110A (Tc) | 15V, 18V | 15.8mOhm @ 60A, 18V | 4.2V @ 10mA | 138 nC @ 18 V | +18V, -5V | 3880 pF @ 600 V | - | 625W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | H2PAK-7 |
|
|
SCT016H120G3AGAUTOMOTIVE-GRADE SILICON CARBIDE |
2,145 |
|
Tabla de datos |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IXFT150N25X3HVMOSFET N-CH 250V 150A TO268HV |
2,083 |
|
Tabla de datos |
HiPerFET™, Ultra X3 | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 150A (Tc) | 10V | 9mOhm @ 75A, 10V | 4.5V @ 4mA | 154 nC @ 10 V | ±20V | 10400 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268HV (IXFT) |
|
|
DMWSH120H28SM3SIC MOSFET BVDSS: >1000V TO247 T |
4,982 |
|
- |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 97.4A (Tc) | 15V | 28.5mOhm @ 50A, 15V | 3.6V @ 17.7mA | 175 nC @ 15 V | +19V, -8V | 3905 pF @ 1000 V | - | 405W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
|
DMWSH120H28SM4SIC MOSFET BVDSS: >1000V TO247-4 |
4,656 |
|
- |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 15V | 28.5mOhm @ 50A, 15V | 3.6V @ 17.7mA | 173.7 nC @ 15 V | +19V, -8V | 3944 pF @ 1000 V | - | 429W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
DIW120SIC028SIC MOSFET, TO-247-3L, N, 118A, |
3,335 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 118A (Tc) | 20V | 28mOhm @ 80A, 20V | 4V @ 25mA | 373 nC @ 20 V | +20V, -5V | 5691 pF @ 1000 V | - | 715W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
|
DIF120SIC022SIC MOSFET, TO-247-4L, N, 120A, |
3,707 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 120A (Tc) | 18V | 22.3mOhm @ 75A, 18V | 4V @ 23.5mA | 269 nC @ 18 V | +18V, -4V | 4817 pF @ 1000 V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
DIF120SIC028SIC MOSFET, TO-247-4L, N, 118A, |
3,529 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 118A (Tc) | 20V | 28mOhm @ 80A, 20V | 4V @ 25mA | 373 nC @ 20 V | +20V, -5V | 5691 pF @ 1000 V | - | 715W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
DIW065SIC015SIC MOSFET, TO-247-3L, N, 150A, |
4,524 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 150A (Tc) | 18V | 15mOhm @ 75A, 18V | 4V @ 15mA | 236 nC @ 20 V | +15V, -4V | 7169 pF @ 400 V | - | 550W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
|
DIF065SIC020SIC MOSFET, TO-247-4L, N, 150A, |
4,032 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 150A (Tc) | 18V | 20mOhm @ 75A, 18V | 4V @ 22mA | 236 nC @ 20 V | +18V, -5V | 7169 pF @ 400 V | - | 550W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
DMWSH120H28SM3QSIC MOSFET BVDSS: >1000V TO247 T |
4,590 |
|
- |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 97.4A (Tc) | 15V | 28.5mOhm @ 50A, 15V | 3.6V @ 17.7mA | 175 nC @ 15 V | +19V, -8V | 3905 pF @ 1000 V | - | 405W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
|
|
IMBG65R009M1HXTMA1SILICON CARBIDE MOSFET |
2,852 |
|
Tabla de datos |
CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 170A (Tc) | 18V | 13.6mOhm @ 97.2A, 18V | 5.7V @ 32.4mA | 176 nC @ 18 V | +23V, -5V | 6054 pF @ 400 V | - | 555W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7 |
|
|
IXTN400N20X4Ultra Junction X4-Class Power |
4,493 |
|
Tabla de datos |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 340A (Tc) | 10V | 3mOhm @ 100A, 10V | 4.5V @ 250µA | 348 nC @ 10 V | ±20V | 27700 pF @ 25 V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227B - miniBLOC |
|
|
C3M0032120J1-TRSIC, MOSFET, 32M, 1200V, TO-263- |
2,908 |
|
Tabla de datos |
C3M™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 68A (Tc) | 15V | 43mOhm @ 41.4A, 15V | 3.6V @ 11.5mA | 111 nC @ 15 V | +15V, -4V | 3424 pF @ 1000 V | - | 277W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
IXTN500N20X4Ultra Junction X4-Class Power |
2,060 |
|
Tabla de datos |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 500A (Tc) | 10V | 1.99mOhm @ 100A, 10V | 4.5V @ 250µA | 535 nC @ 10 V | ±20V | 41500 pF @ 25 V | - | 1150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227B - miniBLOC |
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