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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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E3M0160120DSIC, MOSFET, 160M, 1200V, TO-247 |
3,785 |
|
Tabla de datos |
E Series | TO-247-3 | Tray | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17.9A (Tc) | 15V | 208mOhm @ 8.5A, 15V | 3.6V @ 2.33mA | 33 nC @ 15 V | -8V, +19V | 730 pF @ 1000 V | - | 103W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
|
|
IPTC025N15NM6ATMA1TRENCH >=100V |
4,679 |
|
Tabla de datos |
OptiMOS™ 6 | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 26A (Ta), 264A (Tc) | 8V, 15V | 2.4mOhm @ 120A, 15V | 4V @ 275µA | 137 nC @ 10 V | ±20V | 9800 pF @ 75 V | - | 3.8W (Ta), 395W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-2 |
|
|
IMZC120R053M2HXKSA1IMZC120R053M2HXKSA1 |
4,040 |
|
Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 38A (Tc) | 15V, 18V | 53mOhm @ 13A, 18V | 5.1V @ 4.1mA | 30 nC @ 18 V | +23V, -7V | 1010 pF @ 800 V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-17 |
|
|
CCSPG1510N TR PBFREESURFACE MOUNT MOSFET |
4,164 |
|
Tabla de datos |
- | 25-PowerVFQFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 150 V | 100A (Tj) | 5V | 3.9mOhm @ 30A, 5V | 2.1V @ 12mA | 20 nC @ 5 V | +6V, -4V | 2200 pF @ 75 V | - | 200mW (Ta) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 25-CSP (4x6) |
|
|
IGLT65R055D2ATMA1IGLT65R055D2ATMA1 |
3,701 |
|
Tabla de datos |
CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | 4.7 nC @ 3 V | -10V | 340 pF @ 400 V | - | 102W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-8 |
|
|
IGOT65R055D2AUMA1IGOT65R055D2AUMA1 |
4,012 |
|
Tabla de datos |
CoolGaN™ | 20-BFSOP (0.295", 7.50mm Width) | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 28A (Tc) | - | - | 1.6V @ 2.6mA | 4.7 nC @ 3 V | -10V | 340 pF @ 400 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-20-91 |
|
|
AIMBG120R160M1XTMA1SIC_DISCRETE |
3,955 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 18V, 20V | 200mOhm @ 5A, 20V | 5.1V @ 1.6mA | 14 nC @ 20 V | +23V, -5V | 350 pF @ 800 V | - | 106W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-12 |
|
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G3R60MT07J-TR650V 60M TO-263-7 G3R SIC MOSFET |
2,739 |
|
Tabla de datos |
G3R™, LoRing™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 44A (Tc) | 15V | - | - | - | - | - | - | 182W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
MXP120A080FL-GE3SILICON CARBIDE MOSFET |
2,831 |
|
- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
DMWSH120H90SM4SIC MOSFET BVDSS: >1000V TO247-4 |
3,939 |
|
- |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 40A (Tc) | 15V | 97.5mOhm @ 20A, 15V | 3.5V @ 5mA | 51.1 nC @ 15 V | +19V, -8V | 1112 pF @ 1000 V | - | 235W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
DMWSH120H90SM3SIC MOSFET BVDSS: >1000V TO247 T |
3,201 |
|
- |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 41A (Tc) | 15V | 97.5mOhm @ 20A, 15V | 3.5V @ 5mA | 50.9 nC @ 15 V | +19V, -8V | 1090 pF @ 1000 V | - | 246W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
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SCT070H120G3-7SILICON CARBIDE POWER MOSFET 120 |
2,188 |
|
Tabla de datos |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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NTBG023N065M3SSIC MOS D2PAK-7L 23MOHM 650V M3S |
2,339 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 40A (Tc) | 15V, 18V | 33mOhm @ 20A, 18V | 4V @ 10mA | 69 nC @ 18 V | +22V, -8V | 1951 pF @ 400 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7 |
|
|
IMLT65R033M2HXTMA1SILICON CARBIDE MOSFET |
3,133 |
|
- |
CoolSiC™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 68A (Tc) | 15V, 20V | 30mOhm @ 27.9A, 20V | 5.6V @ 5.7mA | 34 nC @ 18 V | +23V, -7V | 1213 pF @ 400 V | - | 312W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-6 |
|
|
G3F45MT06L-TR650V 40M TO-LL G3F SIC MOSFET |
3,644 |
|
- |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 61A (Tc) | 15V, 18V | 54mOhm @ 20A, 18V | 4.3V @ 8mA | 55 nC @ 18 V | +22V, -10V | 1640 pF @ 400 V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TOLL |
|
|
IPT60R016CM8XTMA1IPT60R016CM8XTMA1 |
3,823 |
|
- |
CoolMOS™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 142A (Tc) | 10V | 16mOhm @ 62.5A, 10V | 4.7V @ 1.48mA | 171 nC @ 10 V | ±20V | 7545 pF @ 400 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
|
STW70N65DM6-4MOSFET N-CH 650V 68A TO247-4 |
3,183 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 68A (Tc) | 10V | 40mOhm @ 34A, 10V | 4.75V @ 250µA | 125 nC @ 10 V | ±25V | 4900 pF @ 100 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
|
|
DIW065SIC049SIC MOSFET, TO-247-3L, N, 60A, 6 |
2,448 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 60A (Tc) | 18V | 49mOhm @ 30A, 18V | 4V @ 10mA | 128 nC @ 20 V | +18V, -5V | 2612 pF @ 600 V | - | 550W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
|
MSC035SMA070B4NMOSFET SIC 700 V 35 MOHM TO-247- |
3,689 |
|
- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 700 V | 75A (Tc) | 18V, 20V | 44mOhm @ 30A, 20V | 5V @ 2mA | 93 nC @ 20 V | +23V, -10V | 1806 pF @ 700 V | - | 304W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
SCT040W65G3-4SILICON CARBIDE POWER MOSFET 650 |
3,101 |
|
Tabla de datos |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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