Hola!! Ahora
+8619886240609(Alice)
+8619886240609(Alice)
Mi cuenta
FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STWA65N045M9N-CHANNEL 650 V, 39 MOHM TYP., 5 |
2,437 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 54A (Tc) | 10V | 45mOhm @ 28A, 10V | 4.2V @ 250µA | 80 nC @ 10 V | ±30V | 4610 pF @ 400 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 Long Leads |
|
|
SCT070W120G3-4AUTOMOTIVE-GRADE SILICON CARBIDE |
3,885 |
|
Tabla de datos |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IGLT65R045D2ATMA1IGLT65R045D2ATMA1 |
4,114 |
|
Tabla de datos |
CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 38A (Tc) | - | - | 1.6V @ 3.3mA | 6 nC @ 3 V | -10V | 430 pF @ 400 V | - | 124W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-8 |
|
|
IMZC120R034M2HXKSA1IMZC120R034M2HXKSA1 |
3,913 |
|
Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 55A (Tc) | 15V, 18V | 34mOhm @ 20A, 18V | 5.1V @ 6.4mA | 45 nC @ 18 V | +23V, -7V | 1510 pF @ 800 V | - | 244W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-17 |
|
|
IGOT65R045D2AUMA1IGOT65R045D2AUMA1 |
2,222 |
|
Tabla de datos |
CoolGaN™ | 20-BFSOP (0.295", 7.50mm Width) | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 34A (Tc) | - | - | 1.6V @ 3.3mA | 6 nC @ 3 V | -10V | 430 pF @ 400 V | - | 109W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-20-91 |
|
|
NVBG032N065M3SSIC MOS D2PAK-7L 32MOHM 650V M3S |
3,373 |
|
- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 52A (Tc) | 15V, 18V | 44mOhm @ 15A, 18V | 4V @ 7.5mA | 55 nC @ 18 V | +22V, -8V | 1409 pF @ 400 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK-7 |
|
|
IMLT65R026M2HXTMA1SILICON CARBIDE MOSFET |
2,200 |
|
- |
CoolSiC™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 82A (Tc) | 15V, 20V | 24mOhm @ 34.5A, 20V | 5.6V @ 7mA | 42 nC @ 18 V | +23V, -7V | 1499 pF @ 400 V | - | 365W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-6 |
|
|
DMWSH120H90SM3QSIC MOSFET BVDSS: >1000V TO247 T |
4,880 |
|
- |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 41A (Tc) | 15V | 97.5mOhm @ 20A, 15V | 3.5V @ 5mA | 50.9 nC @ 15 V | +19V, -8V | 1090 pF @ 1000 V | - | 246W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
|
|
SCT070H120G3AGH2PAK-7 |
3,799 |
|
- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 15V, 18V | 87mOhm @ 15A, 18V | 4.2V @ 1mA | 37 nC @ 18 V | +18V, -5V | 900 pF @ 850 V | - | 223W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | H2PAK-7 |
|
|
DIF120SIC053SIC MOSFET, TO-247-4L, N, 65A, 1 |
2,357 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 65A (Tc) | 18V | 53mOhm @ 33A, 18V | 4V @ 9.5mA | 121 nC @ 15 V | +18V, -4V | 2070 pF @ 1000 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
PJMH042N60FRC_T0_00201600V 42mohm 69A SJ MOSFET |
4,388 |
|
- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IGLT65R035D2ATMA1IGLT65R035D2ATMA1 |
3,869 |
|
Tabla de datos |
CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 47A (Tc) | - | - | 1.6V @ 4.2mA | 7.7 nC @ 3 V | -10V | 540 pF @ 400 V | - | 154W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-8 |
|
|
G3F33MT06L-TR650V 27M TO-LL G3F SIC MOSFET |
4,179 |
|
- |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 90A (Tc) | 15V, 18V | 38mOhm @ 26A, 18V | 4.3V @ 12mA | 81 nC @ 18 V | +22V, -10V | 2394 pF @ 400 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TOLL |
|
|
IGOT65R035D2AUMA1IGOT65R035D2AUMA1 |
4,289 |
|
Tabla de datos |
CoolGaN™ | 20-BFSOP (0.295", 7.50mm Width) | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 44A (Tc) | - | - | 1.6V @ 4.2mA | - | -10V | 540 pF @ 400 V | - | 134W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-20-91 |
|
|
IPQC60R017S7AXTMA1MOSFET |
3,907 |
|
Tabla de datos |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 12V | 17mOhm @ 29A, 12V | 4.5V @ 1.89mA | 196 nC @ 12 V | ±20V | 7370 pF @ 300 V | - | 500W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
|
|
IMZA65R026M2HXKSA1IMZA65R026M2HXKSA1 |
4,669 |
|
Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 64A (Tc) | 15V, 20V | 24mOhm @ 34.5A, 20V | 5.6V @ 7mA | 42 nC @ 18 V | +23V, -7V | 1499 pF @ 400 V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-8 |
|
|
SCT070W120G3-4AGTO247-4 |
3,620 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 15V, 18V | 87mOhm @ 15A, 18V | 4.2V @ 1mA | 41 nC @ 18 V | +18V, -5V | 900 pF @ 850 V | - | 236W (Tc) | -55°C ~ 200°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
|
|
SCT070HU120G3AGHU3PAK |
2,097 |
|
- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 15V, 18V | 87mOhm @ 15A, 18V | 4.2V @ 1mA | 37 nC @ 18 V | +22V, -10V | 900 pF @ 850 V | - | 223W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | HU3PAK |
|
|
E3M0120090J-TRSIC, MOSFET, 120M, 900V, TO-263- |
3,626 |
|
Tabla de datos |
E | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 900 V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 18 nC @ 15 V | +15V, -4V | 414 pF @ 600 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
IMT65R022M1HXUMA1SILICON CARBIDE MOSFET |
3,840 |
|
Tabla de datos |
CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | - | SiCFET (Silicon Carbide) | 650 V | - | 18V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-2 |
- Envío rápido La puerta rápida y convenienteEntrega a domicilio.
- Seguridad de pago Más de 5 diferentes métodos de pago seguro.
- Estricto Control de calidad 365 días de servicio post-venta y garantía
- Simple y profesional Soluciones de adquisición electrónica integral.
