Hola!! Ahora
+8619886240609(Alice)
+8619886240609(Alice)
Mi cuenta
FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIHB100N65E-GE3E SERIES POWER MOSFET 650 V (D- |
2,703 |
|
Tabla de datos |
E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 100mOhm @ 12A, 10V | 5V @ 250µA | 62 nC @ 10 V | ±30V | 2137 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
|
DIW065SIC080SIC MOSFET, TO-247-3L, N, 36A, 6 |
3,953 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 36A (Tc) | 18V | 80mOhm @ 15A, 18V | 4V @ 5mA | 75 nC @ 20 V | +18V, -5V | 1480 pF @ 600 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
|
EPC2304TRANS GAN 200V .005OHM 7QFN |
3,654 |
|
- |
eGaN® | 7-PowerWQFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 200 V | 102A (Ta) | 5V | 3.1mOhm @ 32A, 5V | 2.5V @ 8mA | 24 nC @ 5 V | +6V, -4V | 3195 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 7-QFN (3x5) |
|
AUIRF7799L2TRMOSFET N-CH 250V 375A DIRECTFET |
4,412 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric L8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 375A (Tc) | 10V | 38mOhm @ 21A, 10V | 5V @ 250µA | 165 nC @ 10 V | ±30V | 6714 pF @ 25 V | - | 4.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric L8 |
|
|
IMBG65R040M2HXTMA1SILICON CARBIDE MOSFET |
3,095 |
|
Tabla de datos |
CoolSiC™ Gen 2 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 49A (Tc) | 15V, 20V | 49mOhm @ 22.9A, 18V | 5.6V @ 4.6mA | 28 nC @ 18 V | +23V, -7V | 997 pF @ 400 V | - | 197W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
|
|
TK040N60Z1,S1F600V DTMOS6 TO-247 40MOHM |
3,240 |
|
Tabla de datos |
DTMOSVI | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 52A (Ta) | 10V | 400mOhm @ 21.2A, 10V | 4V @ 2.4mA | 85 nC @ 10 V | ±30V | 5200 pF @ 300 V | - | 297W (Tc) | 150°C | - | - | Through Hole | TO-247 |
|
|
SIHH100N65E-T1-GE3E SERIES POWER MOSFET 650 V (D- |
4,916 |
|
Tabla de datos |
E | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 28A (Tc) | 10V | 100mOhm @ 12A, 10V | 5V @ 250µA | 62 nC @ 10 V | ±30V | 2137 pF @ 100 V | - | 184W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
|
|
G3F60MT06L-TR650V 55M TO-LL G3F SIC MOSFET |
3,857 |
|
- |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 48A (Tc) | 15V, 18V | 75mOhm @ 15A, 18V | 4.3V @ 7mA | 45 nC @ 18 V | +22V, -10V | 1322 pF @ 400 V | - | 185W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TOLL |
|
|
IPQC60R040S7XTMA1MOSFET |
2,537 |
|
Tabla de datos |
CoolMOS™ S7 | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 12V | 40mOhm @ 13A, 12V | 4.5V @ 790µA | 83 nC @ 12 V | ±20V | - | - | 272W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22 |
|
|
IMW65R060M2HXKSA1IMW65R060M2HXKSA1 |
2,117 |
|
Tabla de datos |
CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 32.8A (Tc) | 15V, 20V | 55mOhm @ 15.4A, 20V | 5.6V @ 3.1mA | 19 nC @ 18 V | +23V, -7V | 669 pF @ 400 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3-40 |
|
IPZA60R045P7XKSA1MOSFET N-CH 650V 61A TO247-4-3 |
3,977 |
|
Tabla de datos |
CoolMOS™ P7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 61A (Tc) | 10V | 45mOhm @ 22.5A, 10V | 4V @ 1.08mA | 90 nC @ 10 V | ±20V | 3891 pF @ 400 V | - | 201W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4-3 |
|
|
PSMN1R0-100ASEJPSMN1R0-100ASE/SOT8000A/CCPAK1 |
2,528 |
|
Tabla de datos |
- | 12-BESOP (0.370", 9.40mm Width), Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 430A (Tc) | 10V | 1.04mOhm @ 25A, 10V | 3.6V @ 1mA | 509 nC @ 10 V | ±20V | 36460 pF @ 50 V | - | 1.55kW (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | CCPAK1212 |
|
|
PSMN1R0-80CSEJPSMN1R0-80CSE/SOT8005A/CCPAK12 |
4,714 |
|
Tabla de datos |
- | 12-BESOP (0.370", 9.40mm Width), Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 495A (Tc) | 10V | 0.95Ohm @ 25A, 10V | 3.6V @ 1mA | 504 nC @ 10 V | ±20V | 36802 pF @ 40 V | - | 1.55kW (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | CCPAK1212i |
|
|
GS61008P-MRGS61008P-MR |
4,981 |
|
- |
- | 5-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 90A (Tc) | 6V | 9.5mOhm @ 27A, 6V | 2.6V @ 7mA | 8 nC @ 6 V | +7V, -10V | 600 pF @ 50 V | - | - | -55°C ~ 150°C | - | - | Surface Mount | - |
|
|
IMW65R040M2HXKSA1SILICON CARBIDE MOSFET |
8 |
|
Tabla de datos |
CoolSiC™ Gen 2 | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 46A (Tc) | 15V, 20V | 36mOhm @ 22.9A, 20V | 5.6V @ 4.6mA | 28 nC @ 18 V | +23V, -7V | 997 pF @ 400 V | - | 172W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3-40 |
|
|
AIMZH120R120M1TXKSA1SIC_DISCRETE |
20 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 18V, 20V | 150mOhm @ 7A, 20V | 5.1V @ 2.2mA | 18 nC @ 20 V | +23V, -5V | 458 pF @ 800 V | - | 133W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-11 |
|
|
IPT025N15NM6ATMA1TRENCH >=100V |
2,763 |
|
Tabla de datos |
OptiMOS™ 6 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 26A (Ta), 263A (Tc) | 8V, 15V | 2.4mOhm @ 120A, 15V | 4V @ 275µA | 137 nC @ 10 V | ±20V | 9800 pF @ 75 V | - | 3.8W (Ta), 395W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-1 |
|
|
IPTG025N15NM6ATMA1TRENCH >=100V |
2,874 |
|
Tabla de datos |
OptiMOS™ 6 | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 26A (Ta), 264A (Tc) | 8V, 15V | 2.4mOhm @ 120A, 15V | 4V @ 275µA | 137 nC @ 10 V | ±20V | 9800 pF @ 75 V | - | 3.8W (Ta), 395W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8-1 |
|
|
PSMN1R0-100ASFJPSMN1R0-100ASF/SOT8000A/CCPAK1 |
4,082 |
|
Tabla de datos |
- | 12-BESOP (0.370", 9.40mm Width), Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 460A (Tc) | 10V | 0.99mOhm @ 25A, 10V | 4V @ 1mA | 539 nC @ 10 V | ±20V | 33624 pF @ 50 V | - | 1.55kW (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | CCPAK1212 |
|
TK31J60W,S1VQMOSFET N-CH 600V 30.8A TO3P |
25 |
|
Tabla de datos |
DTMOSIV | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N) |
- Envío rápido La puerta rápida y convenienteEntrega a domicilio.
- Seguridad de pago Más de 5 diferentes métodos de pago seguro.
- Estricto Control de calidad 365 días de servicio post-venta y garantía
- Simple y profesional Soluciones de adquisición electrónica integral.
