制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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TK110Z65Z,S1FPOWER MOSFET TRANSISTOR TO-247-4 |
20 | - |
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DTMOSVI | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 190W (Tc) | 150°C | - | - | Through Hole | TO-247-4L(T) |
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SIHH125N65E-T1-GE3E SERIES POWER MOSFET 650 V (D- |
4,914 | - |
|
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E | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 25A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 57 nC @ 10 V | ±30V | 1938 pF @ 100 V | - | 174W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
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PSMN1R1-80ASFJNEXTPOWER 80 V, 1.11 MOHM, N-CHA |
2,441 | - |
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- | 12-BESOP (0.370", 9.40mm Width), Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 385A (Tc) | 7V, 10V | 1.11mOhm @ 25A, 10V | 4V @ 1mA | 363 nC @ 10 V | ±20V | 24627 pF @ 40 V | - | 935W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | CCPAK1212 |
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PSMN1R1-80CSFJNEXTPOWER 80 V, 1.16 MOHM, N-CHA |
4,466 | - |
|
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- | 12-BESOP (0.370", 9.40mm Width), Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 400A (Ta) | 7V, 10V | 1.16mOhm @ 25A, 10V | 4V @ 1mA | 206 nC @ 10 V | ±20V | 15363 pF @ 40 V | - | 1.071kW (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | CCPAK1212i |
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SIHK125N65E-T1-GE3E SERIES POWER MOSFET 650 V (D- |
4,004 | - |
|
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E | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 25A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 57 nC @ 10 V | ±30V | 1938 pF @ 100 V | - | 174W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK®10 x 12 |
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IXTH450P2MOSFET N-CH 500V 16A TO247 |
4,621 | - |
|
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PolarP2™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 330mOhm @ 8A, 10V | 4.5V @ 250µA | 43 nC @ 10 V | ±30V | 2530 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
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MXP120A250FL-GE3SILICON CARBIDE MOSFET |
3,094 | - |
|
- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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TK065Z65Z,S1FPOWER MOSFET TRANSISTOR TO-247-4 |
25 | - |
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DTMOSVI | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 38A (Ta) | 10V | 65mOhm @ 19A, 10V | 4V @ 1.69mA | 62 nC @ 10 V | ±30V | 3650 pF @ 300 V | - | 270W (Tc) | 150°C | - | - | Through Hole | TO-247-4L(T) |
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PJMH105N60FRC_T0_00601600V 105mohm 35A SJ MOSFET |
2,607 | - |
|
- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SIHG70N60EF-GE3MOSFET N-CH 600V 70A TO247AC |
4,755 | - |
|
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- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 38mOhm @ 35A, 10V | 4V @ 250µA | 380 nC @ 10 V | ±30V | 7500 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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IQFH39N04NM6ATMA1TRENCH <= 40V |
4,952 | - |
|
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OptiMOS™ 6 | 12-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 63A (Ta), 600A (Tc) | 6V, 10V | 0.39mOhm @ 100A, 10V | 2.8V @ 1.05mA | 273 nC @ 10 V | ±20V | 16400 pF @ 20 V | - | 3W (Ta), 273W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSON-12-1 |
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TK35A65W5,S5XMOSFET N-CH 650V 35A TO220SIS |
22 | - |
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DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 95mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 50W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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SIHG125N65E-GE3E SERIES POWER MOSFET 650 V (D- |
2,494 | - |
|
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E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 27A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 57 nC @ 10 V | ±30V | 1938 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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IGLT65R110D2ATMA1IGLT65R110D2ATMA1 |
4,619 | - |
|
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CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 15A (Tc) | - | - | 1.6V @ 1.3mA | 2.4 nC @ 3 V | -10V | 170 pF @ 400 V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-8 |
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IPP022N12NM6AKSA1TRENCH >=100V |
4,609 | - |
|
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OptiMOS™ 6 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 29A (Ta), 203A (Tc) | 8V, 10V | 2.2mOhm @ 100A, 10V | 3.6V @ 275µA | 141 nC @ 10 V | ±20V | 11000 pF @ 60 V | - | 3.8W (Ta), 395W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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SIHK100N65E-T1-GE3E SERIES POWER MOSFET 650 V (D- |
4,186 | - |
|
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E | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 28A (Tc) | 10V | 100mOhm @ 12A, 10V | 5V @ 250µA | 62 nC @ 10 V | ±30V | 2137 pF @ 100 V | - | 184W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK®10 x 12 |
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CCSPG1560N TR PBFREESURFACE MOUNT MOSFET |
2,105 | - |
|
- |
- | 25-PowerVFQFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 150 V | 60A (Tj) | 5V | 7mOhm @ 20A, 5V | 2.1V @ 7mA | 13 nC @ 5 V | +6V, -4V | 1450 pF @ 75 V | - | 200mW (Ta) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 25-CSP (4x6) |
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G3F320MT12J-TR1200V 320M TO-263-7 G3F SIC MOSF |
4,968 | - |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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TK31A60W,S4VXMOSFET N-CH 600V 30.8A TO220SIS |
19 | - |
|
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DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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SIHP100N65E-GE3E SERIES POWER MOSFET 650 V (D- |
4,521 | - |
|
![]() Tabla de datos |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 100mOhm @ 12A, 10V | 5V @ 250µA | 62 nC @ 10 V | ±30V | 2137 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |