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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDZ663PFDZ663P - FDZ663P - MOSFET P-CHA Fairchild Semiconductor |
60,000 |
|
Tabla de datos |
PowerTrench® | 4-XFBGA, WLCSP | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.7A (Ta) | 1.5V, 4.5V | 134mOhm @ 2A, 4.5V | 1.2V @ 250µA | 8.2 nC @ 4.5 V | ±8V | 525 pF @ 10 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-WLCSP (0.8x0.8) |
|
FDC653NSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
2,505 |
|
Tabla de datos |
- | SOT-23-6 Thin, TSOT-23-6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 5A (Ta) | 4.5V, 10V | 35mOhm @ 5A, 10V | 2V @ 250µA | 17 nC @ 10 V | ±20V | 350 pF @ 15 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SuperSOT™-6 |
|
|
FDZ661PZSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
106,670 |
|
Tabla de datos |
PowerTrench® | 4-XFBGA, WLCSP | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.6A (Ta) | 1.5V, 4.5V | 140mOhm @ 2A, 4.5V | 1.2V @ 250µA | 8.8 nC @ 4.5 V | ±8V | 555 pF @ 10 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-WLCSP (0.8x0.8) |
|
FDMS7694POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
3,717 |
|
Tabla de datos |
PowerTrench® | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.2A (Ta), 20A (Tc) | 4.5V, 10V | 9.5mOhm @ 13.2A, 10V | 3V @ 250µA | 22 nC @ 10 V | ±20V | 1410 pF @ 15 V | - | 2.5W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
|
FDMC88849A, 30V, 0.019OHM, N-CHANNEL POW Fairchild Semiconductor |
198,694 |
|
Tabla de datos |
PowerTrench® | 8-PowerWDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta), 15A (Tc) | 4.5V, 10V | 19mOhm @ 9A, 10V | 2.5V @ 250µA | 14 nC @ 10 V | ±20V | 685 pF @ 15 V | - | 2.3W (Ta), 18W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-MLP (3.3x3.3) |
|
FDS6612ASMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
86,571 |
|
Tabla de datos |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.4A (Ta) | 4.5V, 10V | 22mOhm @ 8.4A, 10V | 3V @ 250µA | 7.6 nC @ 5 V | ±20V | 560 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FDD5N50TM4A, 500V, 1.4OHM, N-CHANNEL POWE Fairchild Semiconductor |
2,984 |
|
Tabla de datos |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 5V @ 250µA | 15 nC @ 10 V | ±30V | 640 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
|
FDS8882POWER FIELD-EFFECT TRANSISTOR, 9 Fairchild Semiconductor |
54,025 |
|
Tabla de datos |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta) | 4.5V, 10V | 20mOhm @ 9A, 10V | 3V @ 250µA | 20 nC @ 10 V | ±20V | 940 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FDD8796POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor |
23,432 |
|
Tabla de datos |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 35A (Tc) | 4.5V, 10V | 5.7mOhm @ 35A, 10V | 2.5V @ 250µA | 52 nC @ 10 V | ±20V | 2610 pF @ 13 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FDME820NZTSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
9,500 |
|
Tabla de datos |
PowerTrench® | 6-PowerUFDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 9A (Ta) | 1.8V, 4.5V | 18mOhm @ 9A, 4.5V | 1V @ 250µA | 8.5 nC @ 4.5 V | ±12V | 865 pF @ 10 V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | MicroFet 1.6x1.6 Thin |
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