制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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HUF75645S3ST_QN CHANNEL ULTRAFET 100V, 75A, 1 Fairchild Semiconductor |
308 | - |
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UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | 10V | 14mOhm @ 75A, 10V | 4V @ 250µA | 238 nC @ 20 V | ±20V | 3790 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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FQA16N50MOSFET N-CH 500V 16A TO3P Fairchild Semiconductor |
1,846 | - |
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QFET® | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 320mOhm @ 8A, 10V | 5V @ 250µA | 75 nC @ 10 V | ±30V | 3000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
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FQP18N50V2MOSFET N-CH 500V 18A TO220-3 Fairchild Semiconductor |
532 | - |
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QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 18A (Tc) | 10V | 265mOhm @ 9A, 10V | 5V @ 250µA | 55 nC @ 10 V | ±30V | 3290 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FDP8030LMOSFET N-CH 30V 80A TO220-3 Fairchild Semiconductor |
6,155 | - |
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- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Ta) | 4.5V, 10V | 3.5mOhm @ 80A, 10V | 2V @ 250µA | 170 nC @ 5 V | ±20V | 10500 pF @ 15 V | - | 187W (Tc) | -65°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQA15N70N-CHANNEL POWER MOSFET Fairchild Semiconductor |
379 | - |
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- | TO-3P-3, SC-65-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 15A (Tc) | 10V | 560mOhm @ 7.5A, 10V | 5V @ 250µA | 90 nC @ 10 V | ±30V | 3630 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
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FDB7030LMOSFET N-CH 30V 80A TO263AB Fairchild Semiconductor |
63,006 | - |
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PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Ta) | 4.5V, 10V | 7mOhm @ 40A, 10V | 3V @ 250µA | 33 nC @ 5 V | ±20V | 2440 pF @ 15 V | - | 68W (Tc) | -65°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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FQH35N40N-CHANNEL POWER MOSFET Fairchild Semiconductor |
846 | - |
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QFET® | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 35A (Tc) | 10V | 105mOhm @ 17.5A, 10V | 5V @ 250µA | 140 nC @ 10 V | ±30V | 5600 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
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FDH038AN08A1MOSFET N-CH 75V 22A/80A TO247-3 Fairchild Semiconductor |
4,541 | - |
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PowerTrench® | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 22A (Ta), 80A (Tc) | 6V, 10V | 3.8mOhm @ 80A, 10V | 4V @ 250µA | 160 nC @ 10 V | ±20V | 8665 pF @ 25 V | - | 450W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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FCH077N65F-F085MOSFET N-CH 650V 54A TO247-3 Fairchild Semiconductor |
148 | - |
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SuperFET® II | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 54A (Tc) | 10V | 77mOhm @ 27A, 10V | 5V @ 250µA | 164 nC @ 10 V | ±20V | 7162 pF @ 25 V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
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FQL50N40MOSFET N-CH 400V 50A TO264-3 Fairchild Semiconductor |
338 | - |
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QFET® | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 50A (Tc) | 10V | 75mOhm @ 25A, 10V | 5V @ 250µA | 210 nC @ 10 V | ±30V | 7500 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | HPM F2 |