制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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FDFM2P110MOSFET P-CH 20V 3.5A MICROFET Fairchild Semiconductor |
2,879 | - |
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PowerTrench® | 6-WDFN Exposed Pad | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.5A (Ta) | 2.5V, 4.5V | 140mOhm @ 3.5A, 4.5V | 1.5V @ 250µA | 4 nC @ 4.5 V | ±12V | 280 pF @ 10 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | MicroFET 3x3mm |
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FDS6670ASMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
2,525 | - |
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PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4.5V, 10V | 8mOhm @ 13A, 10V | 3V @ 250µA | 30 nC @ 5 V | ±20V | 2220 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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FDD8770POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor |
41,479 | - |
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PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 35A (Tc) | 4.5V, 10V | 4mOhm @ 35A, 10V | 2.5V @ 250µA | 73 nC @ 10 V | ±20V | 3720 pF @ 13 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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FQU8P10TUPOWER FIELD-EFFECT TRANSISTOR, 6 Fairchild Semiconductor |
27,370 | - |
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QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 6.6A (Tc) | 10V | 530mOhm @ 3.3A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±30V | 470 pF @ 25 V | - | 2.5W (Ta), 44W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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FDD8896POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
850,700 | - |
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PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 17A (Ta), 94A (Tc) | 4.5V, 10V | 5.7mOhm @ 35A, 10V | 2.5V @ 250µA | 60 nC @ 10 V | ±20V | 2525 pF @ 15 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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FQPF3N25MOSFET N-CH 250V 2.3A TO220F Fairchild Semiconductor |
204,011 | - |
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QFET® | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.3A (Tc) | 10V | 2.2Ohm @ 1.15A, 10V | 5V @ 250µA | 5.2 nC @ 10 V | ±30V | 170 pF @ 25 V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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FDD8447LPOWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor |
18,050 | - |
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PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 15.2A (Ta), 50A (Tc) | 4.5V, 10V | 8.5mOhm @ 14A, 10V | 3V @ 250µA | 52 nC @ 10 V | ±20V | 1970 pF @ 20 V | - | 3.1W (Ta), 44W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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FQU5N60CTUPOWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor |
4,040 | - |
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QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.8A (Tc) | 10V | 2.5Ohm @ 1.4A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±30V | 670 pF @ 25 V | - | 2.5W (Ta), 49W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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FDD8880_F0541-ELEMENT, N-CHANNEL POWER MOSFE Fairchild Semiconductor |
13,660 | - |
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDU6N50TUMOSFET N-CH 500V 6A I-PAK Fairchild Semiconductor |
4,579 | - |
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UniFET™ | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 6A (Tc) | 10V | 900mOhm @ 3A, 10V | 5V @ 250µA | 16.6 nC @ 10 V | ±30V | 940 pF @ 25 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |