制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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HUF75852G3MOSFET N-CH 150V 75A TO247-3 Fairchild Semiconductor |
266 | - |
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UltraFET™ | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 75A (Tc) | 10V | 16mOhm @ 75A, 10V | 4V @ 250µA | 480 nC @ 20 V | ±20V | 7690 pF @ 25 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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FCH041N65FN-CHANNEL, MOSFET Fairchild Semiconductor |
450 | - |
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FCH041N65EFN-CHANNEL, MOSFET Fairchild Semiconductor |
310 | - |
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FCH47N60NPOWER FIELD-EFFECT TRANSISTOR, 4 Fairchild Semiconductor |
845 | - |
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SupreMOS™ | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 62mOhm @ 23.5A, 10V | 4V @ 250µA | 151 nC @ 10 V | ±30V | 6700 pF @ 100 V | - | 368W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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FDA2712MOSFET N-CH 250V 64A TO3PN Fairchild Semiconductor |
2,332 | - |
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UltraFET™ | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 64A (Tc) | 10V | 34mOhm @ 40A, 10V | 5V @ 250µA | 129 nC @ 10 V | ±30V | 10175 pF @ 25 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PN |
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FCH47N60F-F085N-CHANNEL MOSFET 600V, 47A Fairchild Semiconductor |
397 | - |
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SuperFET™ | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 75mOhm @ 47A, 10V | 5V @ 250µA | 250 nC @ 10 V | ±30V | 8000 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
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FCH76N60NPOWER FIELD-EFFECT TRANSISTOR, 7 Fairchild Semiconductor |
170 | - |
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SupreMOS™ | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 76A (Tc) | 10V | 36mOhm @ 38A, 10V | 4V @ 250µA | 285 nC @ 10 V | ±30V | 12385 pF @ 100 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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HUFA75329G3N-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,700 | - |
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UltraFET® | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 49A (Tc) | 10V | 24mOhm @ 49A, 10V | 4V @ 250µA | 75 nC @ 20 V | ±20V | 1060 pF @ 25 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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FDZ451PZSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
9,569 | - |
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PowerTrench® | 4-XFBGA, WLCSP | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.6A (Ta) | 1.5V, 4.5V | 140mOhm @ 2A, 4.5V | 1.2V @ 250µA | 8.8 nC @ 4.5 V | ±8V | 555 pF @ 10 V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-WLCSP (0.8x0.8) |
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NTNS4CS69NTCGNTNS4CS69NTCG - TRENCH 6 30V NFE Fairchild Semiconductor |
228,155 | - |
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |