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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDP6676SN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,485 |
|
Tabla de datos |
PowerTrench® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 76A (Ta) | 4.5V, 10V | 6.5mOhm @ 38A, 10V | 3V @ 1mA | 56 nC @ 5 V | ±16V | 4853 pF @ 15 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FQPF9N50CMOSFET N-CH 500V 9A TO220-3 Fairchild Semiconductor |
272,903 |
|
Tabla de datos |
QFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 9A (Tc) | - | 800mOhm @ 4.5A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±30V | 1030 pF @ 25 V | - | 44W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
HUF76432S3STN-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,975 |
|
Tabla de datos |
UltraFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 59A (Tc) | 4.5V, 10V | 17mOhm @ 59A, 10V | 3V @ 250µA | 53 nC @ 10 V | ±16V | 1765 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRFU120ATUMOSFET N-CH 100V 8.4A IPAK Fairchild Semiconductor |
2,580 |
|
Tabla de datos |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 8.4A (Tc) | 10V | 200mOhm @ 4.2A, 10V | 4V @ 250µA | 22 nC @ 10 V | - | 480 pF @ 25 V | - | 2.5W (Ta), 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
|
FDD26AN06A0MOSFET N-CH 60V 7A/36A TO252AA Fairchild Semiconductor |
37,794 |
|
Tabla de datos |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 7A (Ta), 36A (Tc) | 10V | 26mOhm @ 36A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±20V | 800 pF @ 25 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
HUF75939P3MOSFET N-CH 200V 22A TO220-3 Fairchild Semiconductor |
33,787 |
|
Tabla de datos |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 22A (Tc) | 10V | 125mOhm @ 22A, 10V | 4V @ 250µA | 152 nC @ 20 V | ±20V | 2200 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FDS7766SMALL SIGNAL N-CHANNEL MOSFET Fairchild Semiconductor |
11,245 |
|
Tabla de datos |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 17A (Ta) | 4.5V, 10V | 5mOhm @ 17A, 10V | 3V @ 250µA | 69 nC @ 5 V | ±16V | 4973 pF @ 15 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FDS6689SMOSFET N-CH 30V 16A 8SOIC Fairchild Semiconductor |
1,941 |
|
Tabla de datos |
- | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Ta) | 4.5V, 10V | 5.4mOhm @ 16A, 10V | 3V @ 1mA | 78 nC @ 10 V | ±20V | 3290 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
|
HUFA75344S3SMOSFET N-CH 55V 75A D2PAK Fairchild Semiconductor |
1,880 |
|
Tabla de datos |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 210 nC @ 20 V | ±20V | 3200 pF @ 25 V | - | 285W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
FQPF6N60MOSFET N-CH 600V 3.6A TO220F Fairchild Semiconductor |
887 |
|
Tabla de datos |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.6A (Tc) | 10V | 1.5Ohm @ 1.8A, 10V | 5V @ 250µA | 25 nC @ 10 V | ±30V | 1000 pF @ 25 V | - | 44W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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