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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDS6688MOSFET N-CH 30V 16A 8SOIC Fairchild Semiconductor |
18,836 |
|
Tabla de datos |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Ta) | 4.5V, 10V | 6mOhm @ 16A, 10V | 3V @ 250µA | 56 nC @ 5 V | ±20V | 3888 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
|
FDS5692ZMOSFET N-CH 50V 5.8A 8SOIC Fairchild Semiconductor |
8,231 |
|
Tabla de datos |
UltraFET™ | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 5.8A (Ta) | 4.5V, 10V | 24mOhm @ 5.8A, 10V | 3V @ 250µA | 25 nC @ 10 V | ±20V | 1025 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FDS7296N3MOSFET N-CH 30V 15A 8SO Fairchild Semiconductor |
2,499 |
|
Tabla de datos |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 4.5V, 10V | 8mOhm @ 15A, 10V | 3V @ 250µA | 32 nC @ 10 V | ±20V | 1540 pF @ 15 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
HUFA76445P3MOSFET N-CH 60V 75A TO220-3 Fairchild Semiconductor |
518 |
|
Tabla de datos |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 4.5V, 10V | 6.5mOhm @ 75A, 10V | 3V @ 250µA | 150 nC @ 10 V | ±16V | 4965 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
|
FDFS2P102AMOSFET P-CH 20V 3.3A 8SOIC Fairchild Semiconductor |
188,757 |
|
Tabla de datos |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.3A (Ta) | 4.5V, 10V | 125mOhm @ 3.3A, 10V | 3V @ 250µA | 3 nC @ 5 V | ±20V | 182 pF @ 10 V | Schottky Diode (Isolated) | 900mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FDB6670ALMOSFET N-CH 30V 80A TO263AB Fairchild Semiconductor |
52,339 |
|
Tabla de datos |
PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Ta) | 4.5V, 10V | 6.5mOhm @ 40A, 10V | 3V @ 250µA | 33 nC @ 5 V | ±20V | 2440 pF @ 15 V | - | 68W (Tc) | -65°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRFS654BN-CHANNEL POWER MOSFET Fairchild Semiconductor |
9,856 |
|
Tabla de datos |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 21A (Tj) | 10V | 140mOhm @ 10.5A, 10V | 4V @ 250µA | 123 nC @ 10 V | ±30V | 3400 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
|
FDU2572MOSFET N-CH 150V 4A/29A IPAK Fairchild Semiconductor |
7,855 |
|
Tabla de datos |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 4A (Ta), 29A (Tc) | 6V, 10V | 54mOhm @ 9A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±20V | 1770 pF @ 25 V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
NDB4060LMOSFET N-CH 60V 15A D2PAK Fairchild Semiconductor |
1,600 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 15A (Tc) | 5V, 10V | 80mOhm @ 15A, 10V | 2V @ 250µA | 17 nC @ 5 V | ±16V | 600 pF @ 25 V | - | 50W (Tc) | -65°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
|
HUF75343S3MOSFET N-CH 55V 75A I2PAK Fairchild Semiconductor |
540 |
|
Tabla de datos |
UltraFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 9mOhm @ 75A, 10V | 4V @ 250µA | 205 nC @ 20 V | ±20V | 3000 pF @ 25 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
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