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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQB4N20TMMOSFET N-CH 200V 3.6A D2PAK Fairchild Semiconductor |
10,614 |
|
Tabla de datos |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.6A (Tc) | 10V | 1.4Ohm @ 1.8A, 10V | 5V @ 250µA | 6.5 nC @ 10 V | ±30V | 220 pF @ 25 V | - | 3.13W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
FQI5N50CTUMOSFET N-CH 500V 5A I2PAK Fairchild Semiconductor |
10,517 |
|
Tabla de datos |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 5A (Tc) | 10V | 1.4Ohm @ 2.5A, 10V | 4V @ 250µA | 24 nC @ 10 V | ±30V | 625 pF @ 25 V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
|
FQD630TMMOSFET N-CH 200V 7A DPAK Fairchild Semiconductor |
9,850 |
|
Tabla de datos |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 7A (Tc) | 10V | 400mOhm @ 3.5A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±25V | 550 pF @ 25 V | - | 2.5W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FDD068AN03LMOSFET N-CH 30V 17A/35A TO252AA Fairchild Semiconductor |
8,203 |
|
Tabla de datos |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 17A (Ta), 35A (Tc) | 4.5V, 10V | 5.7mOhm @ 35A, 10V | 2.5V @ 250µA | 60 nC @ 10 V | ±20V | 2525 pF @ 15 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FDMB506PMOSFET P-CH 20V 6.8A 8MLP Fairchild Semiconductor |
5,237 |
|
Tabla de datos |
PowerTrench® | 8-PowerWDFN | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 6.8A (Ta) | 1.8V, 4.5V | 30mOhm @ 6.8A, 4.5V | 1.5V @ 250µA | 30 nC @ 4.5 V | ±8V | 2960 pF @ 10 V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-MLP, MicroFET (3x1.9) |
|
SFP9540MOSFET P-CH 100V 17A TO220-3 Fairchild Semiconductor |
4,583 |
|
Tabla de datos |
- | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 10V | 200mOhm @ 8.5A, 10V | 4V @ 250µA | 54 nC @ 10 V | ±30V | 1535 pF @ 25 V | - | 132W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
|
FQB9N25CTMMOSFET N-CH 250V 8.8A D2PAK Fairchild Semiconductor |
3,222 |
|
Tabla de datos |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 8.8A (Tc) | 10V | 430mOhm @ 4.4A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±30V | 710 pF @ 25 V | - | 3.13W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
FDS3612MOSFET N-CH 100V 3.4A 8SOIC Fairchild Semiconductor |
3,042 |
|
Tabla de datos |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 3.4A (Ta) | 6V, 10V | 120mOhm @ 3.4A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 632 pF @ 50 V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FDU068AN03LMOSFET N-CH 30V 17A/35A IPAK Fairchild Semiconductor |
2,514 |
|
Tabla de datos |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 17A (Ta), 35A (Tc) | 4.5V, 10V | 5.7mOhm @ 35A, 10V | 2.5V @ 250µA | 60 nC @ 10 V | ±20V | 2525 pF @ 15 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
|
HUF75329D3MOSFET N-CH 55V 20A IPAK Fairchild Semiconductor |
1,792 |
|
Tabla de datos |
UltraFET™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 20A (Tc) | 10V | 26mOhm @ 20A, 10V | 4V @ 250µA | 65 nC @ 20 V | ±20V | 1060 pF @ 25 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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