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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFW610BTMFP001N-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,600 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.3A (Tc) | 10V | 1.5Ohm @ 1.65A, 10V | 4V @ 250µA | 9.3 nC @ 10 V | ±30V | 225 pF @ 25 V | - | 3.13W (Ta), 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
FQPF3N80CYDTUMOSFET N-CH 800V 3A TO220F-3 Fairchild Semiconductor |
1,570 |
|
Tabla de datos |
QFET® | TO-220-3 Full Pack, Formed Leads | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Tc) | 10V | 4.8Ohm @ 1.5A, 10V | 5V @ 250µA | 16.5 nC @ 10 V | ±30V | 705 pF @ 25 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 (Y-Forming) |
|
HUF76429D3N-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,441 |
|
Tabla de datos |
UltraFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 4.5V, 10V | 23mOhm @ 20A, 10V | 3V @ 250µA | 46 nC @ 10 V | ±16V | 1480 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
FDS6688SMOSFET N-CH 30V 16A 8SOIC Fairchild Semiconductor |
199,516 |
|
Tabla de datos |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Ta) | 4.5V, 10V | 6mOhm @ 16A, 10V | 3V @ 1mA | 78 nC @ 10 V | ±20V | 3290 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FDU8896MOSFET N-CH 30V 17A/94A IPAK Fairchild Semiconductor |
113,351 |
|
Tabla de datos |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 17A (Ta), 94A (Tc) | 4.5V, 10V | 5.7mOhm @ 35A, 10V | 2.5V @ 250µA | 60 nC @ 10 V | ±20V | 2525 pF @ 15 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
FQP5N60CPOWER FIELD-EFFECT TRANSISTOR, 4 Fairchild Semiconductor |
74,533 |
|
Tabla de datos |
QFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.5A (Tc) | 10V | 2.5Ohm @ 2.25A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±30V | 670 pF @ 25 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
HUF75344S3STMOSFET N-CH 55V 75A D2PAK Fairchild Semiconductor |
41,324 |
|
Tabla de datos |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 210 nC @ 20 V | ±20V | 3200 pF @ 25 V | - | 285W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
|
HUF76419S3STMOSFET N-CH 60V 29A D2PAK Fairchild Semiconductor |
31,359 |
|
Tabla de datos |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 29A (Tc) | 4.5V, 10V | 35mOhm @ 29A, 10V | 3V @ 250µA | 28 nC @ 10 V | ±16V | 900 pF @ 25 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
|
FDS6688ASMOSFET N-CH 30V 14.5A 8SOIC Fairchild Semiconductor |
11,680 |
|
Tabla de datos |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14.5A (Ta) | 4.5V, 10V | 6mOhm @ 14.5A, 10V | 3V @ 250µA | 63 nC @ 10 V | ±20V | 2510 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FQI19N20TUMOSFET N-CH 200V 19.4A I2PAK Fairchild Semiconductor |
11,380 |
|
Tabla de datos |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 19.4A (Tc) | 10V | 150mOhm @ 9.7A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±30V | 1600 pF @ 25 V | - | 3.13W (Ta), 140W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
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