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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDU8580MOSFET N-CH 20V 35A IPAK Fairchild Semiconductor |
7,200 |
|
Tabla de datos |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 35A (Tc) | 4.5V, 10V | 9mOhm @ 35A, 10V | 2.5V @ 250µA | 27 nC @ 10 V | ±20V | 1445 pF @ 10 V | - | 49.5W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
ISL9N304AP3N-CHANNEL POWER MOSFET Fairchild Semiconductor |
5,000 |
|
Tabla de datos |
UltraFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 4.5V, 10V | 4.5mOhm @ 75A, 10V | 3V @ 250µA | 105 nC @ 10 V | ±20V | 4075 pF @ 15 V | - | 145W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
HUFA76429D3SMOSFET N-CH 60V 20A TO252AA Fairchild Semiconductor |
1,800 |
|
Tabla de datos |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 4.5V, 10V | 23mOhm @ 20A, 10V | 3V @ 250µA | 46 nC @ 10 V | ±16V | 1480 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
HUFA75637P3MOSFET N-CH 100V 44A TO220-3 Fairchild Semiconductor |
1,472 |
|
Tabla de datos |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 44A (Tc) | 10V | 30mOhm @ 44A, 10V | 4V @ 250µA | 108 nC @ 20 V | ±20V | 1700 pF @ 25 V | - | 155W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FQPF13N10MOSFET N-CH 100V 8.7A TO220F Fairchild Semiconductor |
146,156 |
|
Tabla de datos |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 8.7A (Tc) | 10V | 180mOhm @ 4.35A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±25V | 450 pF @ 25 V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
|
FDU6682N-CHANNEL POWER MOSFET Fairchild Semiconductor |
115,200 |
|
Tabla de datos |
PowerTrench® | TO-251-3 Stub Leads, IPAK | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Ta) | 4.5V, 10V | 6.2mOhm @ 17A, 10V | 3V @ 250µA | 31 nC @ 5 V | ±20V | 2400 pF @ 15 V | - | 1.6W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
|
|
FDP7042LN-CHANNEL POWER MOSFET Fairchild Semiconductor |
33,223 |
|
Tabla de datos |
PowerTrench® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Ta) | 4.5V, 10V | 7.5mOhm @ 25A, 10V | 2V @ 250mA | 51 nC @ 4.5 V | ±12V | 2418 pF @ 15 V | - | 83W (Ta) | -65°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
|
IRLR120ATFMOSFET N-CH 100V 8.4A DPAK Fairchild Semiconductor |
30,174 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 8.4A (Tc) | 5V | 220mOhm @ 4.2A, 5V | 2V @ 250µA | 15 nC @ 5 V | ±20V | 440 pF @ 25 V | - | 2.5W (Ta), 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FDD6796MOSFET N-CH 25V 20A/40A DPAK Fairchild Semiconductor |
15,248 |
|
Tabla de datos |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 20A (Ta), 40A (Tc) | 4.5V, 10V | 5.7mOhm @ 20A, 10V | 3V @ 250µA | 41 nC @ 10 V | ±20V | 2315 pF @ 13 V | - | 3.7W (Ta), 42W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
IRFP254BN-CHANNEL POWER MOSFET Fairchild Semiconductor |
11,578 |
|
Tabla de datos |
- | TO-3P-3, SC-65-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 25A (Tc) | 10V | 140mOhm @ 12.5A, 10V | 4V @ 250µA | 123 nC @ 10 V | ±30V | 3400 pF @ 25 V | - | 221W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
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