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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FQB8N25TMMOSFET N-CH 250V 8A D2PAK Fairchild Semiconductor |
15,754 |
|
Tabla de datos |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 8A (Tc) | 10V | 550mOhm @ 4A, 10V | 5V @ 250µA | 15 nC @ 10 V | ±30V | 530 pF @ 25 V | - | 3.13W (Ta), 87W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRFW730BTMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
12,957 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 5.5A (Tc) | 10V | 1Ohm @ 2.75A, 10V | 4V @ 250µA | 33 nC @ 10 V | ±30V | 1000 pF @ 25 V | - | 3.13W (Ta), 73W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
HP4410DYTN-CHANNEL POWER MOSFET Fairchild Semiconductor |
12,742 |
|
Tabla de datos |
UltraFET® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4.5V, 10V | 135mOhm @ 10A, 10V | 1V @ 250µA | 60 nC @ 10 V | ±16V | 1600 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FQP3N90MOSFET N-CH 900V 3.6A TO220-3 Fairchild Semiconductor |
10,000 |
|
Tabla de datos |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 3.6A (Tc) | 10V | 4.25Ohm @ 1.8A, 10V | 5V @ 250µA | 26 nC @ 10 V | ±30V | 910 pF @ 25 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FDM606PMOSFET P-CH 20V 6.8A 8MLP Fairchild Semiconductor |
9,587 |
|
Tabla de datos |
PowerTrench® | 8-SMD, Flat Lead Exposed Pad | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 6.8A (Tc) | 1.8V, 4.5V | 30mOhm @ 6.8A, 4.5V | 1.5V @ 250µA | 30 nC @ 4.5 V | ±8V | 2200 pF @ 10 V | - | 1.92W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-MLP, MicroFET (3x2) |
|
FQPF6N50MOSFET N-CH 500V 3.6A TO220F Fairchild Semiconductor |
5,884 |
|
Tabla de datos |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.6A (Tc) | 10V | 1.3Ohm @ 1.8A, 10V | 5V @ 250µA | 22 nC @ 10 V | ±30V | 790 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FQPF6N40CMOSFET N-CH 400V 6A TO220F Fairchild Semiconductor |
5,450 |
|
Tabla de datos |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±30V | 625 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FQP16N15MOSFET N-CH 150V 16.4A TO220-3 Fairchild Semiconductor |
3,866 |
|
Tabla de datos |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 16.4A (Tc) | 10V | 160mOhm @ 8.2A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±25V | 910 pF @ 25 V | - | 108W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FDU6030BLMOSFET N-CH 30V 10A/42A IPAK Fairchild Semiconductor |
3,525 |
|
Tabla de datos |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta), 42A (Tc) | 4.5V, 10V | 16mOhm @ 10A, 10V | 3V @ 250µA | 31 nC @ 10 V | ±20V | 1143 pF @ 15 V | - | 3.8W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
|
FQU2N80TUMOSFET N-CH 800V 1.8A IPAK Fairchild Semiconductor |
3,037 |
|
Tabla de datos |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 1.8A (Tc) | 10V | 6.3Ohm @ 900mA, 10V | 5V @ 250µA | 15 nC @ 10 V | ±30V | 550 pF @ 25 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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