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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDPF44N25TRDTUMOSFET N-CH 250V 44A TO220F Fairchild Semiconductor |
800 |
|
Tabla de datos |
UniFET™ | TO-220-3 Full Pack, Formed Leads | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 44A (Tc) | 10V | 69mOhm @ 22A, 10V | 5V @ 250µA | 61 nC @ 10 V | ±30V | 2870 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F (LG-Formed) |
|
FQB27N25TM-F085FQB27N25 - N-CHANNEL ULTRAFET 25 Fairchild Semiconductor |
5,600 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 25.5A (Tc) | 10V | 131mOhm @ 25.5A, 10V | 5V @ 250µA | 49 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263 (D2PAK) |
|
FDI9406-F085FDI9406 - N-CHANNEL POWERTRENCH Fairchild Semiconductor |
5,600 |
|
Tabla de datos |
PowerTrench® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 10V | 2.2mOhm @ 80A, 10V | 4V @ 250µA | 138 nC @ 10 V | ±20V | 7710 pF @ 25 V | - | 176W (Tj) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | I2PAK (TO-262) |
|
FDPF16N50UTMOSFET N-CH 500V 15A TO220F Fairchild Semiconductor |
373 |
|
Tabla de datos |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 15A (Tc) | 10V | 480mOhm @ 7.5A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 1945 pF @ 25 V | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FQPF10N50CFPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
67,211 |
|
Tabla de datos |
FRFET® | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 10A (Tc) | 10V | 610mOhm @ 5A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±30V | 2096 pF @ 25 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FCPF165N65S3R0LFCPF165N65S3R0L - POWER MOSFET, Fairchild Semiconductor |
11,630 |
|
Tabla de datos |
SuperFET® III | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 19A (Tc) | 10V | 165mOhm @ 9.5A, 10V | 4.5V @ 410µA | 35 nC @ 10 V | ±30V | 1415 pF @ 400 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FDP8442-F085POWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor |
750 |
|
Tabla de datos |
PowerTrench® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 23A (Ta), 80A (Tc) | 10V | 3.1mOhm @ 80A, 10V | 4V @ 250µA | 235 nC @ 10 V | ±20V | 12200 pF @ 25 V | - | 254W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-220-3 |
|
|
FCPF9N60NTPOWER FIELD-EFFECT TRANSISTOR, 9 Fairchild Semiconductor |
1,700 |
|
Tabla de datos |
SuperMOS™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 385mOhm @ 4.5A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±30V | 1240 pF @ 100 V | - | 29.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FCP380N60EMOSFET N-CH 600V 10.2A TO220-3 Fairchild Semiconductor |
25,166 |
|
Tabla de datos |
SuperFET® II | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.2A (Tc) | 10V | 380mOhm @ 5A, 10V | 3.5V @ 250µA | 45 nC @ 10 V | ±20V | 1770 pF @ 25 V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FQI13N50CTUPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
13,185 |
|
Tabla de datos |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 10V | 480mOhm @ 6.5A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±30V | 2055 pF @ 25 V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
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