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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HUF75545P3N-CHANNEL ULTRAFET POWER MOSFET Fairchild Semiconductor |
900 |
|
Tabla de datos |
UltraFET™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 75A (Tc) | 10V | 10mOhm @ 75A, 10V | 4V @ 250µA | 235 nC @ 20 V | ±20V | 3750 pF @ 25 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FQI7N60TUPOWER FIELD-EFFECT TRANSISTOR, 7 Fairchild Semiconductor |
1,000 |
|
Tabla de datos |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.4A (Tc) | 10V | 1Ohm @ 3.7A, 10V | 5V @ 250µA | 38 nC @ 10 V | ±30V | 1430 pF @ 25 V | - | 3.13W (Ta), 142W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK (TO-262) |
|
FQPF5N90POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor |
450 |
|
Tabla de datos |
QFET® | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 3A (Tc) | 10V | 2.3Ohm @ 1.5A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±30V | 1550 pF @ 25 V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
|
FCPF380N60POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
2,934 |
|
Tabla de datos |
SuperFET® II | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.2A (Tc) | 10V | 380mOhm @ 5A, 10V | 3.5V @ 250µA | 40 nC @ 10 V | ±20V | 1665 pF @ 25 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FDMC7570SPOWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor |
4,336 |
|
Tabla de datos |
PowerTrench®, SyncFET™ | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 27A (Ta), 40A (Tc) | 4.5V, 10V | 2mOhm @ 27A, 10V | 3V @ 1mA | 68 nC @ 10 V | ±20V | 4410 pF @ 13 V | - | 2.3W (Ta), 59W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Power33 |
|
FCPF2250N80ZMOSFET N-CH 800V 2.6A TO220F Fairchild Semiconductor |
360 |
|
Tabla de datos |
SuperFET® II | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2.6A (Tc) | 10V | 2.25Ohm @ 1.3A, 10V | 4.5V @ 260µA | 14 nC @ 10 V | ±20V | 585 pF @ 100 V | - | 21.9W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
|
FQPF11N50CFPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
1,000 |
|
Tabla de datos |
FRFET® | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | 10V | 550mOhm @ 5.5A, 10V | 4V @ 250µA | 55 nC @ 10 V | ±30V | 2055 pF @ 25 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FDMS8320LDCN-CHANNEL DUAL COOLTM 56 POWER T Fairchild Semiconductor |
41,418 |
|
Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FDA16N50LDTUPOWER FIELD-EFFECT TRANSISTOR, N Fairchild Semiconductor |
28,520 |
|
Tabla de datos |
- | TO-3P-3, SC-65-3, Formed Leads | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16.5A (Tc) | 10V | 380mOhm @ 8.3A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 1945 pF @ 25 V | - | 205W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PN (L-Forming) |
|
FQI27N25TUMOSFET N-CH 250V 25.5A I2PAK Fairchild Semiconductor |
600 |
|
Tabla de datos |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 25.5A (Tc) | 10V | 110mOhm @ 12.75A, 10V | 5V @ 250µA | 65 nC @ 10 V | ±30V | 2450 pF @ 25 V | - | 3.13W (Ta), 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
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