制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
FDP3672POWER FIELD-EFFECT TRANSISTOR, 5 Fairchild Semiconductor |
7,244 | - |
|
![]() Tabla de datos |
PowerTrench® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 105 V | 5.9A (Ta), 41A (Tc) | 6V, 10V | 33mOhm @ 41A, 10V | 4V @ 250µA | 37 nC @ 10 V | ±20V | 1670 pF @ 25 V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
![]() |
FDMS8026SPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
42,000 | - |
|
![]() Tabla de datos |
PowerTrench®, SyncFET™ | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 19A (Ta), 22A (Tc) | 4.5V, 10V | 4.3mOhm @ 19A, 10V | 3V @ 1mA | 37 nC @ 10 V | ±20V | 2280 pF @ 15 V | - | 2.5W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
![]() |
FDS8672SSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
187,604 | - |
|
![]() Tabla de datos |
PowerTrench®, SyncFET™ | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta) | 4.5V, 10V | 4.8mOhm @ 18A, 10V | 3V @ 1mA | 41 nC @ 10 V | ±20V | 2670 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
![]() |
FDPF13N50FTPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
26,239 | - |
|
![]() Tabla de datos |
UniFET™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Tc) | 10V | 540mOhm @ 6A, 10V | 5V @ 250µA | 39 nC @ 10 V | ±30V | 1930 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
![]() |
FDPF12N50FTPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
24,145 | - |
|
![]() Tabla de datos |
UniFET™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 11.5A (Tc) | 10V | 700mOhm @ 6A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±30V | 1395 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
![]() |
FDPF8N50NZUPOWER FIELD-EFFECT TRANSISTOR, 6 Fairchild Semiconductor |
3,716 | - |
|
![]() Tabla de datos |
UniFET-II™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 6.5A (Tc) | 10V | 1.2Ohm @ 4A, 10V | 5V @ 250µA | 18 nC @ 10 V | ±25V | 735 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
![]() |
FQI4N80TUMOSFET N-CH 800V 3.9A I2PAK Fairchild Semiconductor |
1,550 | - |
|
![]() Tabla de datos |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3.9A (Tc) | 10V | 3.6Ohm @ 1.95A, 10V | 5V @ 250µA | 25 nC @ 10 V | ±30V | 880 pF @ 25 V | - | 3.13W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
![]() |
FDD8444POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
310 | - |
|
![]() Tabla de datos |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 145A (Tc) | 10V | 5.2mOhm @ 50A, 10V | 4V @ 250µA | 116 nC @ 10 V | ±20V | 6195 pF @ 25 V | - | 153W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
![]() |
FQPF19N20MOSFET N-CH 200V 11.8A TO220F Fairchild Semiconductor |
15,905 | - |
|
![]() Tabla de datos |
QFET® | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 11.8A (Tc) | 10V | 150mOhm @ 5.9A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±30V | 1600 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
![]() |
FCPF1300N80ZYDMOSFET N-CH 800V 4A TO220F-3 Fairchild Semiconductor |
750 | - |
|
![]() Tabla de datos |
SuperFET® II | TO-220-3 Full Pack, Formed Leads | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4A (Tc) | 10V | 1.3Ohm @ 2A, 10V | 4.5V @ 400µA | 21 nC @ 10 V | ±20V | 880 pF @ 100 V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 (Y-Forming) |