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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FQI5N60CTUMOSFET N-CH 600V 4.5A I2PAK Fairchild Semiconductor |
34,688 |
|
Tabla de datos |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.5A (Tc) | 10V | 2.5Ohm @ 2.25A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±30V | 670 pF @ 25 V | - | 3.13W (Ta), 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
|
FDPF55N06POWER FIELD-EFFECT TRANSISTOR, 5 Fairchild Semiconductor |
132,398 |
|
Tabla de datos |
UniFET™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 55A (Tc) | 10V | 22mOhm @ 27.5A, 10V | 4V @ 250µA | 37 nC @ 10 V | ±25V | 1510 pF @ 25 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FDMS8027SPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
18,985 |
|
Tabla de datos |
PowerTrench®, SyncFET™ | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta), 22A (Tc) | 4.5V, 10V | 5mOhm @ 18A, 10V | 3V @ 1mA | 31 nC @ 10 V | ±20V | 1815 pF @ 15 V | - | 2.5W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
|
FDB86102LZPOWER FIELD-EFFECT TRANSISTOR, 8 Fairchild Semiconductor |
6,918 |
|
Tabla de datos |
PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 8.3A (Ta), 30A (Tc) | 4.5V, 10V | 24mOhm @ 8.3A, 10V | 3V @ 250µA | 21 nC @ 10 V | ±20V | 1275 pF @ 50 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
FDD6030LPOWER FIELD-EFFECT TRANSISTOR, 5 Fairchild Semiconductor |
635,701 |
|
Tabla de datos |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 50A (Tc) | 4.5V, 10V | 14.5mOhm @ 12A, 10V | 3V @ 250µA | 28 nC @ 5 V | ±20V | 1230 pF @ 15 V | - | 3.2W (Ta), 56W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
|
FDMS7660POWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor |
14,176 |
|
Tabla de datos |
PowerTrench® | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 25A (Ta), 42A (Tc) | 4.5V, 10V | 2.8mOhm @ 25A, 10V | 3V @ 250µA | 84 nC @ 10 V | ±20V | 5565 pF @ 15 V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
|
IRFU220BTUIRFU220 - HEXFET N-CHANNEL POWER Fairchild Semiconductor |
2,232 |
|
Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
FDPF5N50FTPOWER FIELD-EFFECT TRANSISTOR, 4 Fairchild Semiconductor |
57,300 |
|
Tabla de datos |
UniFET™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.5A (Tc) | 10V | 1.55Ohm @ 2.25A, 10V | 5V @ 250µA | 8 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FDMS7572SMOSFET N-CH 25V 23A/49A 8PQFN Fairchild Semiconductor |
45,000 |
|
Tabla de datos |
PowerTrench®, SyncFET™ | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 23A (Ta), 49A (Tc) | 4.5V, 10V | 2.9mOhm @ 23A, 10V | 3V @ 1mA | 45 nC @ 10 V | ±20V | 2780 pF @ 13 V | - | 2.5W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
|
FDP16AN08A0MOSFET N-CH 75V 9A/58A TO220-3 Fairchild Semiconductor |
3,200 |
|
Tabla de datos |
PowerTrench® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 9A (Ta), 58A (Tc) | 6V, 10V | 16mOhm @ 58A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±20V | 1857 pF @ 25 V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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