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FET, MOSFET
| 制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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全部重置
应用所有
结果:
| Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT37M100B2MOSFET N-CH 1000V 37A T-MAX Microchip Technology |
0 | - |
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Tabla de datos |
- | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 37A (Tc) | 10V | 330mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT44F80B2MOSFET N-CH 800V 47A T-MAX Microchip Technology |
0 | - |
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Tabla de datos |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 47A (Tc) | 10V | 210mOhm @ 24A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9330 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT20M22LVFRGMOSFET N-CH 200V 100A TO264 Microchip Technology |
0 | - |
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Tabla de datos |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | 10V | 22mOhm @ 500mA, 10V | 4V @ 2.5mA | 435 nC @ 10 V | ±30V | 10200 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT6015LVFRGMOSFET N-CH 600V 38A TO264 Microchip Technology |
0 | - |
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Tabla de datos |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38A (Tc) | - | 150mOhm @ 500mA, 10V | 4V @ 2.5mA | 475 nC @ 10 V | - | 9000 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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APT1201R4BFLLGMOSFET N-CH 1200V 9A TO247 Microchip Technology |
0 | - |
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Tabla de datos |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 9A (Tc) | 10V | 1.5Ohm @ 4.5A, 10V | 5V @ 1mA | 75 nC @ 10 V | ±30V | 2030 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT8030LVRGMOSFET N-CH 800V 27A TO264 Microchip Technology |
0 | - |
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Tabla de datos |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 27A (Tc) | - | 300mOhm @ 500mA, 10V | 4V @ 2.5mA | 510 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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APT34F100B2MOSFET N-CH 1000V 35A T-MAX Microchip Technology |
0 | - |
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Tabla de datos |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 35A (Tc) | 10V | 380mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT34F100LMOSFET N-CH 1000V 35A TO264 Microchip Technology |
0 | - |
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Tabla de datos |
- | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 35A (Tc) | 10V | 400mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT50M75B2FLLGMOSFET N-CH 500V 57A T-MAX Microchip Technology |
0 | - |
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Tabla de datos |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 57A (Tc) | - | 75mOhm @ 28.5A, 10V | 5V @ 2.5mA | 125 nC @ 10 V | - | 5590 pF @ 25 V | - | - | - | - | - | Through Hole | T-MAX™ [B2] |
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APT84F50B2MOSFET N-CH 500V 84A T-MAX Microchip Technology |
0 | - |
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Tabla de datos |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 84A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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