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FET, MOSFET
| 制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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全部重置
应用所有
结果:
| Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MSC090SMA070SAMOSFET SIC 700 V 90 MOHM TO-263- Microchip Technology |
0 | - |
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- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 25A (Tc) | 20V | 115mOhm @ 15A, 20V | 2.4V @ 750µA | 38 nC @ 20 V | +23V, -10V | 785 pF @ 700 V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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APT30F50SMOSFET N-CH 500V 30A D3PAK Microchip Technology |
0 | - |
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Tabla de datos |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 190mOhm @ 14A, 10V | 5V @ 1mA | 115 nC @ 10 V | ±30V | 4525 pF @ 25 V | - | 415W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT38N60BC6MOSFET N-CH 600V 38A TO247 Microchip Technology |
0 | - |
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Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38A (Tc) | 10V | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 112 nC @ 10 V | ±20V | 2826 pF @ 25 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT7M120SMOSFET N-CH 1200V 8A D3PAK Microchip Technology |
0 | - |
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Tabla de datos |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 8A (Tc) | 10V | 2.1Ohm @ 3A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 2565 pF @ 25 V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT18M80BMOSFET N-CH 800V 19A TO247 Microchip Technology |
0 | - |
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Tabla de datos |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 19A (Tc) | 10V | 530mOhm @ 9A, 10V | 5V @ 1mA | 120 nC @ 10 V | ±30V | 3760 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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MSC180SMA120SAMOSFET SIC 1200 V 180 MOHM TO-26 Microchip Technology |
0 | - |
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- |
- | TO-263-8, D2PAK (7 Leads + Tab) | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 21A (Tc) | 20V | 225mOhm @ 8A, 20V | 3.26V @ 500µA | 34 nC @ 20 V | +23V, -10V | 510 pF @ 1000 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7 |
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APT14M100BMOSFET N-CH 1000V 14A TO247 Microchip Technology |
0 | - |
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Tabla de datos |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 14A (Tc) | 10V | 900mOhm @ 7A, 10V | 5V @ 1mA | 120 nC @ 10 V | ±30V | 3965 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT17F80BMOSFET N-CH 800V 18A TO247 Microchip Technology |
0 | - |
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Tabla de datos |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 18A (Tc) | 10V | 580mOhm @ 9A, 10V | 5V @ 1mA | 122 nC @ 10 V | ±30V | 3757 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT37F50SMOSFET N-CH 500V 37A D3PAK Microchip Technology |
0 | - |
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Tabla de datos |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 37A (Tc) | 10V | 150mOhm @ 18A, 10V | 5V @ 1mA | 145 nC @ 10 V | ±30V | 5710 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT14M100SMOSFET N-CH 1000V 14A D3PAK Microchip Technology |
0 | - |
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Tabla de datos |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 14A (Tc) | 10V | 880mOhm @ 7A, 10V | 5V @ 1mA | 120 nC @ 10 V | ±30V | 3965 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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