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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TP2424N8-GMOSFET P-CH 240V 316MA TO243AA Microchip Technology |
2,226 |
|
Tabla de datos |
- | TO-243AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 240 V | 316mA (Tj) | 4.5V, 10V | 8Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 200 pF @ 25 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-243AA (SOT-89) |
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TN0610N3-G-P003MOSFET N-CH 100V 500MA TO92-3 Microchip Technology |
2,788 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 500mA (Tj) | 3V, 10V | 1.5Ohm @ 750mA, 10V | 2V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
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TN0610N3-G-P013MOSFET N-CH 100V 500MA TO92-3 Microchip Technology |
4,746 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Box (TB) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 500mA (Tj) | 3V, 10V | 1.5Ohm @ 750mA, 10V | 2V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
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TN0604N3-G-P005MOSFET N-CH 40V 700MA TO92-3 Microchip Technology |
2,340 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 700mA (Tj) | 5V, 10V | 750mOhm @ 1.5A, 10V | 1.6V @ 1mA | - | ±20V | 190 pF @ 20 V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
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TN0604N3-G-P013MOSFET N-CH 40V 700MA TO92-3 Microchip Technology |
4,359 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Box (TB) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 700mA (Tj) | 5V, 10V | 750mOhm @ 1.5A, 10V | 1.6V @ 1mA | - | ±20V | 190 pF @ 20 V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
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VN2460N3-G-P003MOSFET N-CH 600V 160MA TO92-3 Microchip Technology |
4,812 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 160mA (Tj) | 4.5V, 10V | 20Ohm @ 100mA, 10V | 4V @ 2mA | - | ±20V | 150 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
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VN0606L-G-P003MOSFET N-CH 60V 330MA TO92-3 Microchip Technology |
3,375 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 330mA (Tj) | 10V | 3Ohm @ 1A, 10V | 2V @ 1mA | - | ±30V | 50 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
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VN2460N3-G-P014MOSFET N-CH 600V 160MA TO92-3 Microchip Technology |
4,762 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Box (TB) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 160mA (Tj) | 4.5V, 10V | 20Ohm @ 100mA, 10V | 4V @ 2mA | - | ±20V | 150 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
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TN2501N8-GMOSFET N-CH 18V 400MA TO243AA Microchip Technology |
3,088 |
|
Tabla de datos |
- | TO-243AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 18 V | 400mA (Tj) | 1.2V, 3V | 2.5Ohm @ 200mA, 3V | 1V @ 1mA | - | ±20V | 110 pF @ 15 V | - | 1.6W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-243AA (SOT-89) |
|
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TN2540N3-G-P002MOSFET N-CH 400V 175MA TO92-3 Microchip Technology |
4,420 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 175mA (Tj) | 4.5V, 10V | 12Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 125 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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