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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DN2535N3-G-P013MOSFET N-CH 350V 120MA TO92 Microchip Technology |
2,667 |
|
- |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Box (TB) | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 350 V | 120mA (Tj) | 0V | 25Ohm @ 120mA, 0V | - | - | ±20V | 300 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92 (TO-226) |
|
MIC94030YM4-TRMOSFET P-CH 16V 1A SOT-143 Microchip Technology |
2,604 |
|
Tabla de datos |
TinyFET® | TO-253-4, TO-253AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 16 V | 1A (Ta) | 2.7V, 10V | 450mOhm @ 100mA, 10V | 1.4V @ 250µA | - | 16V | 100 pF @ 12 V | - | 568mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-143 |
|
MCP87030T-U/MFMOSFET N-CH 25V 100A 8PDFN Microchip Technology |
2,167 |
|
Tabla de datos |
- | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 100A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 1.6V @ 250µA | 22 nC @ 4.5 V | +10V, -8V | 1635 pF @ 12.5 V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
|
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TN0106N3-G-P013MOSFET N-CH 60V 350MA TO92-3 Microchip Technology |
3,378 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Box (TB) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 350mA (Tj) | 4.5V, 10V | 3Ohm @ 500mA, 10V | 2V @ 500µA | - | ±20V | 60 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
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TP0606N3-G-P003MOSFET P-CH 60V 320MA TO92-3 Microchip Technology |
4,201 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 320mA (Tj) | 5V, 10V | 3.5Ohm @ 750mA, 10V | 2.4V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
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TP0606N3-G-P002MOSFET P-CH 60V 320MA TO92-3 Microchip Technology |
2,250 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 320mA (Tj) | 5V, 10V | 3.5Ohm @ 750mA, 10V | 2.4V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
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TN0104N3-G-P003MOSFET N-CH 40V 450MA TO92-3 Microchip Technology |
2,680 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 450mA (Ta) | 3V, 10V | 1.8Ohm @ 1A, 10V | 1.6V @ 500µA | - | ±20V | 70 pF @ 20 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
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VN2410L-G-P013MOSFET N-CH 240V 190MA TO92-3 Microchip Technology |
2,092 |
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Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Box (TB) | Active | N-Channel | MOSFET (Metal Oxide) | 240 V | 190mA (Tj) | 2.5V, 10V | 10Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 125 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
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VN2410L-G-P014MOSFET N-CH 240V 190MA TO92-3 Microchip Technology |
3,421 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Box (TB) | Active | N-Channel | MOSFET (Metal Oxide) | 240 V | 190mA (Tj) | 2.5V, 10V | 10Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 125 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
|
TN0104N3-G-P014MOSFET N-CH 40V 450MA TO92-3 Microchip Technology |
4,879 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Box (TB) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 450mA (Ta) | 3V, 10V | 1.8Ohm @ 1A, 10V | 1.6V @ 500µA | - | ±20V | 70 pF @ 20 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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