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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MCP87022T-U/MFMOSFET N-CH 25V 100A 8PDFN Microchip Technology |
3,111 |
|
Tabla de datos |
- | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 100A (Tc) | 4.5V, 10V | 2.3mOhm @ 25A, 10V | 1.6V @ 250µA | 29 nC @ 4.5 V | +10V, -8V | 2310 pF @ 12.5 V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
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TN0620N3-G-P014MOSFET N-CH 200V 250MA TO92-3 Microchip Technology |
2,597 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Box (TB) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 250mA (Tj) | 5V, 10V | 6Ohm @ 500mA, 10V | 1.6V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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VN3205N3-G-P002MOSFET N-CH 50V 1.2A TO92-3 Microchip Technology |
4,014 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 1.2A (Tj) | 4.5V, 10V | 300mOhm @ 3A, 10V | 2.4V @ 10mA | - | ±20V | 300 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
TP2522N8-GMOSFET P-CH 220V 260MA TO243AA Microchip Technology |
2,690 |
|
Tabla de datos |
- | TO-243AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 220 V | 260mA (Tj) | 4.5V, 10V | 12Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 125 pF @ 25 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-243AA (SOT-89) |
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TP2540N3-G-P002MOSFET P-CH 400V 86MA TO92-3 Microchip Technology |
4,526 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 400 V | 86mA (Tj) | 4.5V, 10V | 25Ohm @ 100mA, 10V | 2.4V @ 1mA | - | ±20V | 125 pF @ 25 V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
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MCP87018T-U/MFMOSFET N-CH 25V 100A 8PDFN Microchip Technology |
3,377 |
|
Tabla de datos |
- | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 100A (Tc) | 3.3V, 10V | 1.9mOhm @ 25A, 10V | 1.6V @ 250µA | 37 nC @ 4.5 V | +10V, -8V | 2925 pF @ 12.5 V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
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TP2640N3-GMOSFET P-CH 400V 180MA TO92-3 Microchip Technology |
3,252 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) | Bag | Obsolete | P-Channel | MOSFET (Metal Oxide) | 400 V | 180mA (Tj) | 2.5V, 10V | 15Ohm @ 300mA, 10V | 2V @ 1mA | - | ±20V | 300 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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VN1206L-G-P002MOSFET N-CH 120V 230MA TO92-3 Microchip Technology |
4,489 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 230mA (Tj) | 2.5V, 10V | 6Ohm @ 500mA, 10V | 2V @ 1mA | - | ±30V | 125 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
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VP0550N3-G-P013MOSFET P-CH 500V 54MA TO92-3 Microchip Technology |
4,727 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Box (TB) | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 54mA (Tj) | 5V, 10V | 125Ohm @ 10mA, 10V | 4.5V @ 1mA | - | ±20V | 70 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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LP0701LG-GMOSFET P-CH 16.5V 700MA 8SOIC Microchip Technology |
4,901 |
|
Tabla de datos |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 16.5 V | 700mA (Tj) | 2V, 5V | 1.5Ohm @ 300mA, 5V | 1V @ 1.1mA | - | ±10V | 250 pF @ 15 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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