制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IMZA75R040M1HXKSA1SILICON CARBIDE MOSFET Infineon Technologies |
235 | - |
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CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 44A (Tj) | 15V, 20V | 37mOhm @ 16.6A, 20V | 5.6V @ 6mA | 34 nC @ 18 V | +23V, -5V | 1135 pF @ 500 V | - | 185W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4 |
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AIMCQ120R060M1TXTMA1SIC_DISCRETE Infineon Technologies |
850 | - |
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CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 44A (Tc) | 18V, 20V | 75mOhm @ 13A, 20V | 5.1V @ 4.3mA | 32 nC @ 20 V | +25V, -10V | 880 pF @ 800 V | - | 259W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
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AIMZH120R160M1TXKSA1SIC_DISCRETE Infineon Technologies |
207 | - |
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- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 18V, 20V | 200mOhm @ 5A, 20V | 5.1V @ 1.5mA | 14 nC @ 20 V | +23V, -5V | 350 pF @ 800 V | - | 109W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-11 |
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IMZC120R040M2HXKSA1IMZC120R040M2HXKSA1 Infineon Technologies |
240 | - |
|
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CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 48A (Tc) | 15V, 18V | 40mOhm @ 18A, 18V | 5.1V @ 5.5mA | 39 nC @ 18 V | +23V, -7V | 1310 pF @ 800 V | - | 218W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-17 |
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IPT60T022S7XTMA1HIGH POWER_NEW Infineon Technologies |
218 | - |
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CoolMOS™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23A (Tj) | 12V | 22mOhm @ 23A, 12V | 4.5V @ 1.43mA | 150 nC @ 12 V | ±20V | 5640 pF @ 300 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
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IPQC60T022S7XTMA1HIGH POWER_NEW Infineon Technologies |
750 | - |
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CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 90A (Tc) | 12V | 22mOhm @ 23A, 12V | 4.5V @ 1.43mA | 150 nC @ 12 V | ±20V | 5640 pF @ 300 V | - | 416W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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IMW65R033M2HXKSA1IMW65R033M2HXKSA1 Infineon Technologies |
369 | - |
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CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 53A (Tc) | 15V, 20V | 30mOhm @ 27.9A, 20V | 5.6V @ 5.7mA | 34 nC @ 18 V | +23V, -7V | 1214 pF @ 400 V | - | 194W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3-40 |
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IMT40R015M2HXTMA1SIC-MOS Infineon Technologies |
1,942 | - |
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CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 400 V | 11.7A (Ta), 111A (Tc) | 15V, 18V | 19.1mOhm @ 27.1A, 18V | 5.6V @ 9.7mA | 62 nC @ 18 V | +23V, -7V | 2730 pF @ 200 V | - | 3.8W (Ta), 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
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IPDQ60R016CM8XTMA1IPDQ60R016CM8XTMA1 Infineon Technologies |
720 | - |
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- |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 135A (Tc) | 10V | 16mOhm @ 62.5A, 10V | 4.7V @ 1.48mA | 171 nC @ 10 V | ±20V | 7545 pF @ 400 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22 |
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IPDQ60R022S7AXTMA1MOSFET Infineon Technologies |
750 | - |
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CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 12V | 22mOhm @ 23A, 12V | 4.5V @ 1.44mA | 150 nC @ 12 V | ±20V | 5640 pF @ 300 V | - | 416W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22-1 |