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FET, MOSFET
| 制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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全部重置
应用所有
结果:
| Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IMT40R045M2HXTMA1SIC-MOS Infineon Technologies |
2,000 | - |
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Tabla de datos |
CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 400 V | 6.8A (Ta), 43A (Tc) | 15V, 18V | 56.2mOhm @ 8.9A, 18V | 5.6V @ 3.2mA | 21 nC @ 18 V | +23V, -7V | 910 pF @ 200 V | - | 3.8W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
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IPDQ65R080CFD7AXTMA1AUTOMOTIVE_COOLMOS Infineon Technologies |
430 | - |
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Tabla de datos |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 36A (Tc) | 10V | 80mOhm @ 12.5A, 10V | 4.5V @ 630µA | 50 nC @ 10 V | ±20V | 2513 pF @ 400 V | - | 223W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22-1 |
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IMZA75R140M1HXKSA1SILICON CARBIDE MOSFET Infineon Technologies |
235 | - |
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Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 16A (Tj) | 15V, 20V | 129mOhm @ 4.7A, 20V | 5.6V @ 1.7mA | 13 nC @ 18 V | +23V, -5V | 351 pF @ 500 V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4 |
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IQFH36N04NM6ATMA1IQFH36N04NM6ATMA1 Infineon Technologies |
2,507 | - |
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- |
OptiMOS™ 6 | 12-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 66A (Ta), 656A (Tc) | 6V, 10V | 0.36mOhm @ 100A, 10V | 2.8V @ 1.05mA | 309 nC @ 10 V | ±20V | 18600 pF @ 20 V | - | 3W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSON-12-1 |
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IMBG120R181M2HXTMA1SIC DISCRETE Infineon Technologies |
128 | - |
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Tabla de datos |
CoolSiC™ Gen 2 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 14.9A (Tc) | 15V, 18V | 181.4mOhm @ 3.9A, 18V | 5.1V @ 1.2mA | 9.7 nC @ 18 V | +23V, -10V | 350 pF @ 800 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
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IPT60T065S7XTMA1HIGH POWER_NEW Infineon Technologies |
1,930 | - |
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Tabla de datos |
CoolMOS™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 8A (Tc) | 12V | 65mOhm @ 8A, 12V | 4.5V @ 470µA | 51 nC @ 12 V | ±20V | 1932 pF @ 300 V | - | 167W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
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IMBG40R045M2HXTMA1SIC-MOS Infineon Technologies |
945 | - |
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Tabla de datos |
CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 400 V | 6.8A (Ta), 43A (Tc) | 15V, 18V | 56.2mOhm @ 8.9A, 18V | 5.6V @ 3.2mA | 21 nC @ 18 V | +23V, -7V | 910 pF @ 200 V | - | 3.8W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-11 |
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IMDQ75R090M1HXUMA1IMDQ75R090M1HXUMA1 Infineon Technologies |
744 | - |
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Tabla de datos |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 24A (Tj) | 15V, 20V | 83mOhm @ 7.4A, 20V | 5.6V @ 2.6mA | 15 nC @ 18 V | +20V, -2V | 542 pF @ 500 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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GS-065-008-6-L-MRGS-065-008-6-L-MR Infineon Technologies Canada Inc. |
922 | - |
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- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 8.8A (Tc) | 6V | 235mOhm @ 2.2A, 6V | 2.6V @ 1.7mA | 1.6 nC @ 6 V | +7V, -10V | 54 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
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IAUTN06S5N008ATMA1MOSFET_)40V 60V) Infineon Technologies |
6,000 | - |
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Tabla de datos |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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