Hola!! Ahora
+8619886240609(Alice)
+8619886240609(Alice)
Mi cuenta
FET, MOSFET
| 制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GS-065-011-6-LR-MRGS-065-011-6-LR-MR Infineon Technologies Canada Inc. |
235 | - |
|
- |
- | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 12.2A (Tc) | 6V | 180mOhm @ 3.2A, 6V | 2.6V @ 2.4mA | 2.2 nC @ 6 V | +7V, -10V | 70 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (8x8) |
|
|
GS-065-011-6-L-MRGS-065-011-6-L-MR Infineon Technologies Canada Inc. |
227 | - |
|
- |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 12.2A (Tc) | 6V | 180mOhm @ 3.2A, 6V | 2.6V @ 2.4mA | 2.2 nC @ 6 V | +7V, -10V | 70 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
|
|
IMTA65R060M2HXTMA1SILICON CARBIDE MOSFET Infineon Technologies |
367 | - |
|
Tabla de datos |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IMT40R036M2HXTMA1SIC-MOS Infineon Technologies |
2,000 | - |
|
Tabla de datos |
CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 400 V | 7.6A (Ta), 50A (Tc) | 15V, 18V | 45.7mOhm @ 11.1A, 18V | 5.6V @ 4mA | 26 nC @ 18 V | +23V, -7V | 1170 pF @ 200 V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
|
|
AIMBG75R090M1HXTMA1AIMBG75R090M1HXTMA1 Infineon Technologies |
980 | - |
|
- |
CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 24A (Tj) | 15V, 20V | 83mOhm @ 7.4A, 20V | 5.6V @ 2.6mA | 15 nC @ 18 V | +23V, -5V | 542 pF @ 500 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7 |
|
|
IPF129N20NM6ATMA1IPF129N20NM6ATMA1 Infineon Technologies |
864 | - |
|
Tabla de datos |
OptiMOS™ 6 | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 11A (Ta), 87A (Tc) | 10V, 15V | 12mOhm @ 65A, 15V | 4.5V @ 129µA | 56 nC @ 10 V | ±20V | 3800 pF @ 100 V | - | 3.8W (Ta), 234W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
|
|
AIMDQ75R090M1HXUMA1AIMDQ75R090M1HXUMA1 Infineon Technologies |
750 | - |
|
- |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 24A (Tj) | 15V, 20V | 83mOhm @ 7.4A, 20V | 5.6V @ 2.6mA | 15 nC @ 18 V | +23V, -5V | 542 pF @ 500 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
|
|
GS-065-011-1-L-MRGS-065-011-1-L-MR Infineon Technologies Canada Inc. |
136 | - |
|
- |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 6V | 190mOhm @ 3.2A, 6V | 2.6V @ 2.4mA | 2.2 nC @ 6 V | +7V, -10V | 70 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
|
|
IPDQ65R060CFD7AXTMA1AUTOMOTIVE_COOLMOS Infineon Technologies |
390 | - |
|
Tabla de datos |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 45A (Tc) | 10V | 60mOhm @ 16.4A, 10V | 4.5V @ 820µA | 65 nC @ 10 V | ±20V | 3288 pF @ 400 V | - | 272W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22-1 |
|
IPZ60R099P6FKSA1MOSFET N-CH 600V 37.9A TO247-4 Infineon Technologies |
188 | - |
|
Tabla de datos |
CoolMOS™ P6 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 37.9A (Tc) | 10V | 99mOhm @ 14.5A, 10V | 4.5V @ 1.21mA | 70 nC @ 10 V | ±20V | 3330 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
- Envío rápido La puerta rápida y convenienteEntrega a domicilio.
- Seguridad de pago Más de 5 diferentes métodos de pago seguro.
- Estricto Control de calidad 365 días de servicio post-venta y garantía
- Simple y profesional Soluciones de adquisición electrónica integral.
