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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPB65R145CFD7AATMA1AUTOMOTIVE_COOLMOS PG-TO263-3 Infineon Technologies |
860 |
|
Tabla de datos |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17A (Tc) | 10V | 145mOhm @ 8.5A, 10V | 4.5V @ 420µA | 36 nC @ 10 V | ±20V | 1694 pF @ 400 V | - | 98W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IPP020N08N5AKSA1MOSFET N-CH 80V 120A TO220-3 Infineon Technologies |
562 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.8V @ 280µA | 223 nC @ 10 V | ±20V | 16900 pF @ 40 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP100N06S2L05AKSA2MOSFET N-CH 55V 100A TO220-3 Infineon Technologies |
456 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 4.5V, 10V | 4.7mOhm @ 80A, 10V | 2V @ 250µA | 230 nC @ 10 V | ±20V | 5660 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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AUIRFS8407-7TRLMOSFET N-CH 40V 240A D2PAK Infineon Technologies |
791 |
|
Tabla de datos |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 3.9V @ 150µA | 225 nC @ 10 V | ±20V | 7437 pF @ 25 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
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IAUMN08S5N012GAUMA1MOSFET_(75V 120V( Infineon Technologies |
1,901 |
|
Tabla de datos |
OptiMOS™ 5 | 4-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 300A (Tj) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.8V @ 232µA | 194 nC @ 10 V | ±20V | 13550 pF @ 40 V | - | 325W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HSOG-4-1 |
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IPB50R140CPATMA1MOSFET N-CH 550V 23A TO263-3 Infineon Technologies |
1,000 |
|
Tabla de datos |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 23A (Tc) | 10V | 140mOhm @ 14A, 10V | 3.5V @ 930µA | 64 nC @ 10 V | ±20V | 2540 pF @ 100 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPB240N04S4R9ATMA1MOSFET N-CH 40V 240A TO263-7 Infineon Technologies |
943 |
|
Tabla de datos |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 0.87mOhm @ 100A, 10V | 4V @ 230µA | 290 nC @ 10 V | ±20V | 23000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-3 |
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IPTG018N08NM5ATMA1TRENCH 40<-<100V PG-HSOG-8 Infineon Technologies |
1,784 |
|
Tabla de datos |
OptiMOS™ | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 32A (Ta), 253A (Tc) | 6V, 10V | 1.8mOhm @ 150A, 10V | 3.8V @ 159µA | 127 nC @ 10 V | ±20V | 9200 pF @ 40 V | - | 3.8W (Ta), 231W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8-1 |
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ISC035N10NM5LF2ATMA1ISC035N10NM5LF2ATMA1 MOSFET Infineon Technologies |
4,675 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 19A (Ta), 164A (Tc) | 10V | 3.5mOhm @ 50A, 10V | 3.9V @ 115µA | 88 nC @ 10 V | ±20V | 7200 pF @ 50 V | - | 3W (Ta), 217W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8 FL |
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IPA65R125C7XKSA1MOSFET N-CH 650V 10A TO220-FP Infineon Technologies |
322 |
|
Tabla de datos |
CoolMOS™ C7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 125mOhm @ 8.9A, 10V | 4V @ 440µA | 35 nC @ 10 V | ±20V | 1670 pF @ 400 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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