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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPI60R165CPXKSA1HIGH POWER_LEGACY Infineon Technologies |
500 |
|
Tabla de datos |
CoolMOS® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 165mOhm @ 12A, 10V | 3.5V @ 790µA | 52 nC @ 10 V | ±20V | 2000 pF @ 100 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
IPZA60R099P7XKSA1MOSFET N-CH 600V 31A TO247-4 Infineon Technologies |
240 |
|
Tabla de datos |
CoolMOS™ P7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 99mOhm @ 10.5A, 10V | 4V @ 530µA | 45 nC @ 10 V | ±20V | 1952 pF @ 400 V | - | 117W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
|
|
IPBE65R145CFD7AATMA1AUTOMOTIVE PG-TO263-7 Infineon Technologies |
934 |
|
Tabla de datos |
CoolMOS™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17A (Tc) | 10V | 145mOhm @ 8.5A, 10V | 4.5V @ 420µA | 36 nC @ 10 V | ±20V | 1694 pF @ 400 V | - | 98W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-7-11 |
|
IPW65R150CFDFKSA2MOSFET N-CH 650V 22.4A TO247-3 Infineon Technologies |
192 |
|
Tabla de datos |
CoolMOS™ CFD2 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-41 |
|
|
IPDQ65R099CFD7AXTMA1AUTOMOTIVE_COOLMOS Infineon Technologies |
460 |
|
Tabla de datos |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 29A (Tc) | 10V | 99mOhm @ 9.7A, 10V | 4.5V @ 480µA | 39 nC @ 10 V | ±20V | 1942 pF @ 400 V | - | 186W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22-1 |
|
|
IMWH170R650M1XKSA1IMWH170R650M1XKSA1 Infineon Technologies |
425 |
|
- |
CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 7.5A (Tc) | 12V, 15V | 580mOhm @ 1.5A, 15V | 5.7V @ 1.7mA | 8.1 nC @ 12 V | 15V, 12V | 337 pF @ 1000 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3-U04 |
|
|
IQD009N06NM5ATMA1TRENCH 40<-<100V Infineon Technologies |
4,943 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 42A (Ta), 445A (Tc) | 6V, 10V | 0.9mOhm @ 50A, 10V | 3.3V @ 163µA | 150 nC @ 10 V | ±20V | 12000 pF @ 30 V | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSON-8-9 |
|
IPB60R105CFD7ATMA1MOSFET N-CH 600V 21A TO263-3 Infineon Technologies |
848 |
|
Tabla de datos |
CoolMOS™ CFD7 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 105mOhm @ 9.3A, 10V | 4.5V @ 470µA | 42 nC @ 10 V | ±20V | 1752 pF @ 400 V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
|
IMT65R260M1HXUMA1SILICON CARBIDE MOSFET Infineon Technologies |
1,870 |
|
Tabla de datos |
CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | - | SiCFET (Silicon Carbide) | 650 V | - | 18V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-2 |
|
|
IPT65R099CFD7XTMA1MOSFET N-CH 650V 8HSOF Infineon Technologies |
1,995 |
|
Tabla de datos |
CoolMOS™ CFD7 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-2 |
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