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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IAUC120N06S5N032ATMA1MOSFET_)40V 60V) Infineon Technologies |
6,947 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tj) | 7V, 10V | 3.23mOhm @ 60A, 10V | 3.4V @ 44µA | 47 nC @ 10 V | ±20V | 3446 pF @ 30 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8-34 |
|
IRLH6224TRPBFMOSFET N-CH 20V 28A/105A 8PQFN Infineon Technologies |
3,915 |
|
Tabla de datos |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 28A (Ta), 105A (Tc) | 2.5V, 4.5V | 3mOhm @ 20A, 4.5V | 1.1V @ 50µA | 86 nC @ 10 V | ±12V | 3710 pF @ 10 V | - | 3.6W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
|
BSC019N04LSTATMA1MOSFET N-CH 40V Infineon Technologies |
5,000 |
|
Tabla de datos |
- | - | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 28A (Ta), 161A (Tc) | 4.5V, 10V | 1.9mOhm @ 50A, 10V | 2V @ 250µA | 57 nC @ 10 V | ±20V | 4060 pF @ 20 V | - | 94W (Tc) | -55°C ~ 175°C (TA) | - | - | - | - |
|
|
ISZ173N15NM6ATMA1TRENCH >=100V Infineon Technologies |
4,965 |
|
Tabla de datos |
OptiMOS™ 6 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 7.9A (Ta), 48A (Tc) | 8V, 15V | 16.3mOhm @ 16A, 15V | 4V @ 35µA | 19.2 nC @ 10 V | ±20V | 1300 pF @ 75 V | - | 2.5W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSDSON-8 FL |
|
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IAUAN04S7N008AUMA1IAUAN04S7N008AUMA1 Infineon Technologies |
2,310 |
|
Tabla de datos |
OptiMOS™ 7 | 5-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 40A (Ta), 290A (Tj) | 7V, 10V | 0.82mOhm @ 90A, 10V | 3V @ 60µA | 78 nC @ 10 V | ±20V | 5410 pF @ 20 V | - | 133W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HSOF-5-2 |
|
IRFR2607ZTRPBFMOSFET N-CH 75V 42A DPAK Infineon Technologies |
5,931 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 42A (Tc) | - | 22mOhm @ 30A, 10V | 4V @ 50µA | 51 nC @ 10 V | - | 1440 pF @ 25 V | - | - | - | - | - | Surface Mount | PG-TO252-3-901|DPAK |
|
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IPD90N06S4L05ATMA2MOSFET N-CH 60V 90A TO252-31 Infineon Technologies |
2,256 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 4.5V, 10V | 4.6mOhm @ 90A, 10V | 2.2V @ 60µA | 110 nC @ 10 V | ±16V | 8180 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-11 |
|
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IAUCN08S7N024ATMA1MOSFET_(75V 120V( Infineon Technologies |
1,990 |
|
Tabla de datos |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 165A | 10V | - | - | 16 nC @ 10 V | - | - | - | - | -55°C ~ 175°C | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8-34 |
|
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IAUAN04S7N007AUMA1IAUAN04S7N007AUMA1 Infineon Technologies |
448 |
|
Tabla de datos |
OptiMOS™ 7 | 5-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Ta), 330A (Tj) | 7V, 10V | 0.72mOhm @ 100A, 10V | 3V @ 73µA | 94 nC @ 10 V | ±20V | 6460 pF @ 20 V | - | 149W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HSOF-5-2 |
|
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IPD65R660CFDATMA2MOSFET N-CH 700V 6A TO252-3-313 Infineon Technologies |
1,607 |
|
Tabla de datos |
CoolMOS™ CFD2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 6A (Tc) | 10V | 660mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22 nC @ 10 V | ±20V | 615 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3-313 |
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